Evans Charlotte I, Yang Rui, Gan Lucia T, Abbasi Mahdiyeh, Wang Xifan, Traylor Rachel, Fan Jonathan A, Natelson Douglas
Department of Physics and Astronomy, Rice University, Houston, TX 77005.
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
Proc Natl Acad Sci U S A. 2020 Sep 22;117(38):23350-23355. doi: 10.1073/pnas.2002284117. Epub 2020 Sep 8.
The electronic Seebeck response in a conductor involves the energy-dependent mean free path of the charge carriers and is affected by crystal structure, scattering from boundaries and defects, and strain. Previous photothermoelectric (PTE) studies have suggested that the thermoelectric properties of polycrystalline metal nanowires are related to grain structure, although direct evidence linking crystal microstructure to the PTE response is difficult to elucidate. Here, we show that room temperature scanning PTE measurements are sensitive probes that can detect subtle changes in the local Seebeck coefficient of gold tied to the underlying defects and strain that mediate crystal deformation. This connection is revealed through a combination of scanning PTE and electron microscopy measurements of single-crystal and bicrystal gold microscale devices. Unexpectedly, the photovoltage maps strongly correlate with gradually varying crystallographic misorientations detected by electron backscatter diffraction. The effects of individual grain boundaries and differing grain orientations on the PTE signal are minimal. This scanning PTE technique shows promise for identifying minor structural distortions in nanoscale materials and devices.
导体中的电子塞贝克响应涉及电荷载流子与能量相关的平均自由程,并受晶体结构、边界和缺陷的散射以及应变的影响。先前的光热电动势(PTE)研究表明,多晶金属纳米线的热电性质与晶粒结构有关,尽管将晶体微观结构与PTE响应联系起来的直接证据难以阐明。在这里,我们表明室温扫描PTE测量是灵敏的探针,能够检测与介导晶体变形的潜在缺陷和应变相关的金的局部塞贝克系数的细微变化。这种联系是通过对单晶和双晶金微尺度器件进行扫描PTE和电子显微镜测量相结合而揭示的。出乎意料的是,光电压图与通过电子背散射衍射检测到的逐渐变化的晶体取向差密切相关。单个晶界和不同晶粒取向对PTE信号的影响很小。这种扫描PTE技术有望用于识别纳米级材料和器件中的微小结构畸变。