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晶体金器件中晶界和晶格畸变产生的热电响应。

Thermoelectric response from grain boundaries and lattice distortions in crystalline gold devices.

作者信息

Evans Charlotte I, Yang Rui, Gan Lucia T, Abbasi Mahdiyeh, Wang Xifan, Traylor Rachel, Fan Jonathan A, Natelson Douglas

机构信息

Department of Physics and Astronomy, Rice University, Houston, TX 77005.

Department of Electrical Engineering, Stanford University, Stanford, CA 94305.

出版信息

Proc Natl Acad Sci U S A. 2020 Sep 22;117(38):23350-23355. doi: 10.1073/pnas.2002284117. Epub 2020 Sep 8.

Abstract

The electronic Seebeck response in a conductor involves the energy-dependent mean free path of the charge carriers and is affected by crystal structure, scattering from boundaries and defects, and strain. Previous photothermoelectric (PTE) studies have suggested that the thermoelectric properties of polycrystalline metal nanowires are related to grain structure, although direct evidence linking crystal microstructure to the PTE response is difficult to elucidate. Here, we show that room temperature scanning PTE measurements are sensitive probes that can detect subtle changes in the local Seebeck coefficient of gold tied to the underlying defects and strain that mediate crystal deformation. This connection is revealed through a combination of scanning PTE and electron microscopy measurements of single-crystal and bicrystal gold microscale devices. Unexpectedly, the photovoltage maps strongly correlate with gradually varying crystallographic misorientations detected by electron backscatter diffraction. The effects of individual grain boundaries and differing grain orientations on the PTE signal are minimal. This scanning PTE technique shows promise for identifying minor structural distortions in nanoscale materials and devices.

摘要

导体中的电子塞贝克响应涉及电荷载流子与能量相关的平均自由程,并受晶体结构、边界和缺陷的散射以及应变的影响。先前的光热电动势(PTE)研究表明,多晶金属纳米线的热电性质与晶粒结构有关,尽管将晶体微观结构与PTE响应联系起来的直接证据难以阐明。在这里,我们表明室温扫描PTE测量是灵敏的探针,能够检测与介导晶体变形的潜在缺陷和应变相关的金的局部塞贝克系数的细微变化。这种联系是通过对单晶和双晶金微尺度器件进行扫描PTE和电子显微镜测量相结合而揭示的。出乎意料的是,光电压图与通过电子背散射衍射检测到的逐渐变化的晶体取向差密切相关。单个晶界和不同晶粒取向对PTE信号的影响很小。这种扫描PTE技术有望用于识别纳米级材料和器件中的微小结构畸变。

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本文引用的文献

1
Progress of Photodetectors Based on the Photothermoelectric Effect.基于光热电效应的光探测器的研究进展。
Adv Mater. 2019 Dec;31(50):e1902044. doi: 10.1002/adma.201902044. Epub 2019 Sep 4.
3
Single-crystal metal growth on amorphous insulating substrates.非晶态绝缘衬底上的单晶金属生长。
Proc Natl Acad Sci U S A. 2018 Jan 23;115(4):685-689. doi: 10.1073/pnas.1717882115. Epub 2018 Jan 8.
6
Large and tunable photothermoelectric effect in single-layer MoS2.单层 MoS2 中的大可调光热电效应。
Nano Lett. 2013 Feb 13;13(2):358-63. doi: 10.1021/nl303321g. Epub 2013 Jan 11.
7
Hot carrier-assisted intrinsic photoresponse in graphene.石墨烯中的热载流子辅助本征光响应。
Science. 2011 Nov 4;334(6056):648-52. doi: 10.1126/science.1211384. Epub 2011 Oct 6.
8
A review of strain analysis using electron backscatter diffraction.利用电子背散射衍射进行应变分析综述。
Microsc Microanal. 2011 Jun;17(3):316-29. doi: 10.1017/S1431927611000055. Epub 2011 Mar 22.

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