Liu Nannan, Wu Xian, Fan Lishuang, Gong Shan, Guo Zhikun, Chen Aosai, Zhao Chenyang, Mao Yachun, Zhang Naiqing, Sun Kening
State Key Laboratory of Urban Water Resource and Environment, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China.
Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin, 150001, China.
Adv Mater. 2020 Oct;32(42):e1908420. doi: 10.1002/adma.201908420. Epub 2020 Sep 9.
The weak van der Waals interactions enable ion-intercalation-type hosts to be ideal pseudocapacitive materials for energy storage. Here, a methodology for the preparation of hydrated vanadium dioxide nanoribbon (HVO) with moderate transport pathways is proposed. Out of the ordinary, the intercalation pseudocapacitive reaction mechanism is discovered for HVO, which powers high-rate capacitive charge storage compared with the battery-type intercalation reaction. The main factor is that the defective crystalline structure provides suitable ambient spacing for rapidly accommodating and transporting cations. As a result, the HVO delivers a fast Zn ion diffusion coefficient and a low Zn diffusion barrier. The electrochemical results with intercalation pseudocapacitance demonstrate a high reversible capacity of 396 mAh g at 0.05 A g , and even maintain 88 mAh g at a high current density of 50 A g .
弱范德华相互作用使离子插层型主体成为储能的理想赝电容材料。在此，提出了一种制备具有适度传输路径的水合二氧化钒纳米带（HVO）的方法。不同寻常的是，发现了HVO的插层赝电容反应机制，与电池型插层反应相比，它为高速率电容电荷存储提供动力。主要因素是有缺陷的晶体结构为快速容纳和传输阳离子提供了合适的环境间距。结果，HVO具有快速的锌离子扩散系数和较低的锌扩散势垒。插层赝电容的电化学结果表明，在0.05 A g时具有396 mAh g的高可逆容量，甚至在50 A g的高电流密度下仍保持88 mAh g。
