Deuter Valerie, Grochowicz Maciej, Brose Sascha, Biller Jan, Danylyuk Serhiy, Taubner Thomas, Siemion Agnieszka, Grützmacher Detlev, Juschkin Larissa
Opt Express. 2020 Aug 31;28(18):27000-27012. doi: 10.1364/OE.398805.
The potential of extreme ultraviolet (EUV) computational proximity lithography for fabrication of arbitrary nanoscale patterns is investigated. We propose to use a holographic mask (attenuating phase shifting mask) consisting of structures of two phase levels. This approach allows printing of arbitrary, non-periodic structures without using high-resolution imaging optics. The holographic mask is designed for a wavelength of 13.5 nm with a conventional high-resolution electron beam resist as the phase shifting medium (pixel size 50 nm). The imaging performance is evaluated by using EUV radiation with different degrees of spatial coherence. Therefore exposures on identical masks are carried out with both undulator radiation at a synchrotron facility and plasma-based radiation at a laboratory setup.
研究了极紫外（EUV）计算邻近光刻技术用于制造任意纳米级图案的潜力。我们建议使用由两个相位水平结构组成的全息掩模（衰减相移掩模）。这种方法允许在不使用高分辨率成像光学器件的情况下印刷任意的、非周期性结构。该全息掩模针对波长为13.5 nm进行设计，使用传统的高分辨率电子束抗蚀剂作为相移介质（像素尺寸为50 nm）。通过使用具有不同空间相干度的EUV辐射来评估成像性能。因此，在同步加速器设施的波荡器辐射和实验室装置的基于等离子体的辐射下，对相同的掩模进行曝光。
