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生长态和退火态X/Co/Y超薄体系中的垂直磁各向异性和界面Dzyaloshinskii-Moriya相互作用

Perpendicular magnetic anisotropy and interfacial Dzyaloshinskii-Moriya interaction in as grown and annealed X/Co/Y ultrathin systems.

作者信息

Benguettat-El Mokhtari I, Ourdani D, Roussigné Y, Mos R B, Nasui M, Kail F, Chahed L, Chérif S M, Stashkevich A, Gabor M, Belmeguenai M

机构信息

Université Sorbonne Paris Nord, LSPM, CNRS, UPR 3407, F-93430 Villetaneuse, France. Laboratoire de Physique des Couches Minces et Matériaux pour l'Electronique, Université Oran1, BP1524, El M'naouar 31100 Oran, Algerie.

出版信息

J Phys Condens Matter. 2020 Nov 25;32(49):495802. doi: 10.1088/1361-648X/abb0a8.

Abstract

The perpendicular magnetic anisotropy (PMA) and the interfacial Dzyaloshinskii-Moriya interaction (iDMI) are investigated in as grown and 300 °C annealed Co-based ultrathin systems. For this, Co films of various thicknesses (0.8 nm ⩽ t ⩽ 5.7 nm) were deposited by magnetron sputtering on thermally oxidized Si substrates using Pt, W, Ir, Ti, Ru and MgO buffer or/and capping layers. X-ray diffraction was used to investigate their structural properties and vibrating sample magnetometry (VSM) was used to determine the magnetic dead layer thickness and the magnetization at saturation (M ). VSM revealed that the M for the Pt and the Ir buffered and capped films is the largest. Microstrip line ferromagnetic resonance (MS-FMR), used to extract the gyromagnetic ratio of the thicker Co films, revealed the existence of a second order PMA term, which is thickness dependent. Brillouin light scattering (BLS) in the Damon-Eshbach configuration was used to investigate the thickness dependence of the iDMI effective constant from the spin wave vector dependence of the frequency difference between Stokes and anti-Stokes lines. BLS and MS-FMR techniques were combined to measure the spin wave frequency variation as a function of the in-plane applied magnetic field (where the second order PMA contribution vanishes). The thickness dependence of the effective magnetization was then deduced and used to investigate PMA. For all the systems, PMA results from interface and volume contributions that we determined. The largest interface PMA constants were obtained for Pt- and Ir-based systems due to the electron hybridization of Co with these heavy metals having high spin orbit coupling. Annealing at 300 °C increases both the interface PMA and iDMI for the Pt/Co/MgO most probably due to de-mixing of interpenetrating oxygen atoms from the Co layer and the formation of a sharp Co/O interface.

摘要

在生长态和300℃退火的钴基超薄体系中研究了垂直磁各向异性(PMA)和界面Dzyaloshinskii-Moriya相互作用(iDMI)。为此,通过磁控溅射在热氧化的硅衬底上沉积了各种厚度(0.8nm⩽t⩽5.7nm)的钴膜,使用了铂、钨、铱、钛、钌和氧化镁缓冲层或/和覆盖层。利用X射线衍射研究其结构性质,并用振动样品磁强计(VSM)确定磁死层厚度和饱和磁化强度(M)。VSM表明,铂和铱缓冲及覆盖的薄膜的M最大。用于提取较厚钴膜旋磁比的微带线铁磁共振(MS-FMR)揭示了二阶PMA项的存在,该项与厚度有关。采用Damon-Eshbach配置的布里渊光散射(BLS),根据斯托克斯线和反斯托克斯线之间频率差的自旋波矢量依赖性,研究iDMI有效常数的厚度依赖性。将BLS和MS-FMR技术结合起来,测量自旋波频率随面内施加磁场的变化(其中二阶PMA贡献消失)。然后推导有效磁化强度的厚度依赖性,并用于研究PMA。对于所有体系,PMA来自我们确定的界面和体相贡献。由于钴与这些具有高自旋轨道耦合的重金属发生电子杂化,基于铂和铱的体系获得了最大的界面PMA常数。300℃退火可能由于互穿的氧原子从钴层中解混以及形成尖锐的钴/氧界面,增加了Pt/Co/MgO的界面PMA和iDMI。

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