Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing 100191, People's Republic of China. Department of Applied Physics, Institute for Photonic Integration, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands.
Nanotechnology. 2020 Apr 10;31(15):155705. doi: 10.1088/1361-6528/ab62cd. Epub 2019 Dec 17.
The interfacial Dzyaloshinskii-Moriya interaction (iDMI) is attracting great interest for spintronics. An iDMI constant larger than 3 mJ m is expected to minimize the size of skyrmions and to optimize the domain-wall dynamics. In this study, we experimentally demonstrate a giant iDMI in Pt/Co/X/MgO ultra-thin film structures with perpendicular magnetization. The iDMI constants were measured using a field-driven creep regime domain expansion method. The enhancement of iDMI with an atomically thin insertion of Ta and Mg is comprehensively understood with the help of ab-initio calculations. Thermal annealing has been used to crystallize the MgO thin layer to improve the tunneling magneto-resistance (TMR), but interestingly it also provides a further increase of the iDMI constant. An increase of the iDMI constant of up to 3.3 mJ m is shown, which is promising for the scaling down of skyrmion electronics.
界面 Dzyaloshinskii-Moriya 相互作用（iDMI）在自旋电子学中引起了极大的兴趣。预计 iDMI 常数大于 3 mJ m 可以最小化斯格明子的尺寸并优化畴壁动力学。在这项研究中，我们通过实验证明了具有垂直磁化的 Pt/Co/X/MgO 超薄薄膜结构中的巨大 iDMI。使用场驱动蠕变区域扩展方法测量 iDMI 常数。借助于从头算计算，全面理解了 Ta 和 Mg 原子层插入对 iDMI 的增强。热退火已用于使 MgO 薄层结晶以改善隧穿磁阻（TMR），但有趣的是，它还提供了 iDMI 常数的进一步增加。显示出 iDMI 常数增加高达 3.3 mJ m，这对于缩小斯格明子电子学的尺寸很有希望。
