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具有多稳态和反单调性特性的分数阶忆阻器混沌振荡器。

Fracmemristor chaotic oscillator with multistable and antimonotonicity properties.

作者信息

Lu Haikong, Petrzela Jiri, Gotthans Tomas, Rajagopal Karthikeyan, Jafari Sajad, Hussain Iqtadar

机构信息

School of Electronic Engineering, Changzhou College of Information Technology, 213164, China.

Department of Radio Electronics, Brno University of Technology, 616 00 Brno, Czech Republic.

出版信息

J Adv Res. 2020 Jun 17;25:137-145. doi: 10.1016/j.jare.2020.05.025. eCollection 2020 Sep.

DOI:10.1016/j.jare.2020.05.025
PMID:32922981
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7474243/
Abstract

Memristor is a non-linear circuit element in which voltage-current relationship is determined by the previous values of the voltage and current, generally the history of the circuit. The nonlinearity in this component can be considered as a fractional-order form, which yields a fractional memristor (fracmemristor). In this paper, a fractional-order memristor in a chaotic oscillator is applied, while the other electronic elements are of integer order. The fractional-order range is determined in a way that the circuit has chaotic solutions. Also, the statistical and dynamical features of this circuit are analyzed. Tools like Lyapunov exponents and bifurcation diagram show the existence of multistability and antimonotonicity, two less common properties in chaotic circuits.

摘要

忆阻器是一种非线性电路元件,其电压-电流关系由电压和电流的先前值(通常是电路的历史)决定。该元件中的非线性可被视为分数阶形式,从而产生分数阶忆阻器(分数忆阻器)。本文应用了混沌振荡器中的分数阶忆阻器,而其他电子元件为整数阶。分数阶范围的确定方式是使电路具有混沌解。此外,还分析了该电路的统计和动态特性。诸如李雅普诺夫指数和分岔图等工具表明了多稳定性和反单调性的存在,这是混沌电路中较少见的两个特性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/0cd8d5c21e30/gr12.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/0cd8d5c21e30/gr12.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/e306ad2eb45b/ga1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/2a0060b01454/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/2e9d25e8e8d6/gr2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/4445fc5c1a51/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/a6c5da2a8fd5/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/5cd05a9f3a4e/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/f102199c34a7/gr6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/1b6d4ef56433/gr7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/f23ba669861a/gr8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/ccdef092d65a/gr9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/5f94a2aec374/gr10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/7f69ced80520/gr11.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99ac/7474243/0cd8d5c21e30/gr12.jpg

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本文引用的文献

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Realization of fractional-order capacitor based on passive symmetric network.基于无源对称网络的分数阶电容器的实现。
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