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通过电子束蒸发沉积的纳米晶和非晶石墨碳膜的结构特性与电荷传输之间的耦合

Coupling between structural properties and charge transport in nano-crystalline and amorphous graphitic carbon films, deposited by electron-beam evaporation.

作者信息

Brus V V, Ilashchuk M I, Orletskyi I G, Solovan M M, Parkhomenko G P, Babichuk I S, Schopp N, Andrushchak G O, Mostovyi A I, Maryanchuk P D

机构信息

Department of Physics, School of Sciences and Humanities, Nazarbayev University, Nur-Sultan, Kazakhstan.

Department of Electronics and Energy Engineering, Chernivtsi National University, Chernivtsi, Ukraine.

出版信息

Nanotechnology. 2020 Dec 11;31(50):505706. doi: 10.1088/1361-6528/abb5d4.

Abstract

Nano-crystalline and amorphous films of graphitized carbon were deposited by electron-beam evaporation of bulk graphite. Structural properties and the size of graphite nanoclusters (L ≈ 1.2-5 nm) in the films were determined from the analysis of their Raman spectra. Electrical properties of the bulk nano-crystalline graphite reference sample and the deposited graphitic carbon films were measured by means of the Hall effect technique within the temperature range from 290 to 420 K. The electrical conductivity σ and Hall mobility μ of all samples exhibited exponential temperature dependences, indicating on the non-metallic behavior. Electrical properties of the amorphous graphitic carbon thin films, deposited at low substrate temperatures (620 and 750 K) were analyzed in the scope of the hopping charge transport mechanism via localized states. We have shown that the charge transport in the bulk and thin film (920 K) nano-crystalline graphite samples is carried out via the tunneling and thermionic emission over potential barriers at the grain boundaries.This paper contributes towards better understanding of coupling between structural and electrical properties of graphitic carbon thin films.

摘要

通过对块状石墨进行电子束蒸发,沉积出了石墨化碳的纳米晶薄膜和非晶薄膜。通过对薄膜拉曼光谱的分析,确定了薄膜中石墨纳米团簇的结构性质和尺寸(L≈1.2 - 5纳米)。利用霍尔效应技术在290至420K的温度范围内测量了块状纳米晶石墨参考样品和沉积的石墨碳薄膜的电学性质。所有样品的电导率σ和霍尔迁移率μ均表现出指数温度依赖性,表明其具有非金属行为。在通过局域态的跳跃电荷传输机制范围内,分析了在低衬底温度(620和750K)下沉积的非晶石墨碳薄膜的电学性质。我们已经表明,块状和薄膜(920K)纳米晶石墨样品中的电荷传输是通过晶界处的势垒隧穿和热电子发射进行的。本文有助于更好地理解石墨碳薄膜的结构和电学性质之间的耦合关系。

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