Wang Fang-Hsing, Chen Kun-Neng, Hsu Chao-Ming, Liu Min-Chu, Yang Cheng-Fu
Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan.
Department of Electrical Engineering, Kun-Shan University, Tainan 710, Taiwan.
Nanomaterials (Basel). 2016 May 10;6(5):88. doi: 10.3390/nano6050088.
In this study, Ga₂O₃-doped ZnO (GZO) thin films were deposited on glass and flexible polyimide (PI) substrates at room temperature (300 K), 373 K, and 473 K by the radio frequency (RF) magnetron sputtering method. After finding the deposition rate, all the GZO thin films with a nano-scale thickness of about 150 ± 10 nm were controlled by the deposition time. X-ray diffraction patterns indicated that the GZO thin films were not amorphous and all exhibited the (002) peak, and field emission scanning electron microscopy showed that only nano-scale particles were observed. The dependences of the structural, electrical, and optical properties of the GZO thin films on different deposition temperatures and substrates were investigated. X-ray photoemission spectroscopy (XPS) was used to measure the elemental composition at the chemical and electronic states of the GZO thin films deposited on different substrates, which could be used to clarify the mechanism of difference in electrical properties of the GZO thin films. In this study, the XPS binding energy spectra of Ga2p and Ga2p peaks, Zn2p and Zn2p peaks, the Ga3d peak, and O₁ peaks for GZO thin films on glass and PI substrates were well compared.
在本研究中，通过射频（RF）磁控溅射法在室温（300 K）、373 K和473 K下，将Ga₂O₃掺杂的ZnO（GZO）薄膜沉积在玻璃和柔性聚酰亚胺（PI）衬底上。在确定沉积速率后，所有厚度约为150±10 nm的纳米级GZO薄膜均通过沉积时间进行控制。X射线衍射图谱表明，GZO薄膜并非非晶态，且均呈现出（002）峰，场发射扫描电子显微镜显示仅观察到纳米级颗粒。研究了GZO薄膜的结构、电学和光学性质对不同沉积温度和衬底的依赖性。采用X射线光电子能谱（XPS）测量沉积在不同衬底上的GZO薄膜在化学和电子态下的元素组成，这可用于阐明GZO薄膜电学性质差异的机制。在本研究中，对玻璃和PI衬底上GZO薄膜的Ga2p和Ga2p峰、Zn2p和Zn2p峰、Ga3d峰以及O₁峰的XPS结合能谱进行了很好的比较。
Zotero 插件
