Kumar Arvind Shankar, Wang Mingyuan, Li Yancheng, Fujita Ryuji, Gao Xuan P A
Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio 44106, United States.
Department of Physics, Oxford University, Parks Road, Oxford OX1 3PU, U.K.
ACS Appl Mater Interfaces. 2020 Oct 14;12(41):46854-46861. doi: 10.1021/acsami.0c09635. Epub 2020 Oct 5.
Heterostructures of two-dimensional (2D) van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and stacking of 2D monochalcogenides InSe and GaSe, we observe charge transfer between InSe and GaSe because of the 2D van der Waals interface formation and a strong hysteresis effect in the electron transport through the InSe layer when a gate voltage is applied through the GaSe layer. A gate voltage-dependent conductance decay rate is also observed. We relate these observations to the gate voltage-dependent dynamical charge transfer between InSe and GaSe layers.
二维范德华半导体材料的异质结构为探索基础物理和潜在器件应用提供了一个多样化的平台。在通过二维单硫属化物InSe和GaSe的顺序机械剥离和堆叠形成的InSe/GaSe异质结构中，由于二维范德华界面的形成，我们观察到InSe和GaSe之间的电荷转移，并且当通过GaSe层施加栅极电压时，在通过InSe层的电子传输中存在强烈的滞后效应。还观察到了与栅极电压相关的电导衰减率。我们将这些观察结果与InSe和GaSe层之间与栅极电压相关的动态电荷转移联系起来。
