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Structural and electronic properties of exohedrally doped neutral silicon clusters LnSi ( = 5, 10; Ln = Sm, Eu, Yb).

作者信息

Fan Yi-Wei, Wang Huai-Qian, Li Hui-Fang

机构信息

College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China.

College of engineering, Huaqiao University, Quanzhou 362021, China.

出版信息

Phys Chem Chem Phys. 2020 Sep 23;22(36):20545-20552. doi: 10.1039/d0cp03754k.

DOI:10.1039/d0cp03754k
PMID:32966449
Abstract

Lanthanide-doped silicon clusters have been extensively studied in the fields of optoelectronics, magnetism and nanomaterials during the last decade. Herein, systematic structure searches for typical neutral clusters of lanthanide-doped silicon clusters LnSin (n = 5, 10; Ln = Sm, Eu, Yb) have been performed by means of density functional theory coupled with the "stochastic kicking" global search technique. It is found that the Ln atom in LnSin prefers to locate on the surface of Sin to form an exohedral structure, and this exohedral configuration may dominate the nascent structure of LnSin. The spin density and Mulliken population analyses indicate that LnSin clusters possess remarkable magnetic moments (except for YbSin), which are mainly supplied by the Ln 4f electrons (except for Yb). Density of states visually shows the significant spin polarization for open-shell structures of SmSin and EuSin. As for the YbSin (n = 5, 10) system, it has a closed-shell electronic structure with a large HOMO-LUMO gap of 2.72 eV. Bonding analysis, including localized orbital locator and electron density difference, shows that the Si-Si covalent interaction and Sm-Si electrostatic interaction are important for the structural stability of LnSin.

摘要

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