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基于双杂化密度泛函理论对掺钕硅纳米团簇NdSi(n = 8 - 20)的生长行为和光电子能谱的研究

Study on the growth behavior and photoelectron spectroscopy of neodymium-doped silicon nanoclusters NdSi (n = 8-20) with a double-hybrid density functional theory.

作者信息

Dong Xueyan, Yang Zhaofeng, Yang Jucai

机构信息

School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot, 010051, People's Republic of China.

Inner Mongolia Key Laboratory of Theoretical and Computational Chemistry Simulation, Hohhot, 010051, People's Republic of China.

出版信息

J Mol Model. 2021 Feb 17;27(3):86. doi: 10.1007/s00894-020-04637-5.

Abstract

Structural evolution, magnetic moment, and thermochemical and spectral properties of NdSi (n = 8-20) nanoclusters were studied. Optimized structures for NdSi demonstrated that the configuration with quintet ground state prefers Nd-substituted for a Si of the most stable Si (n = 8-11) structure to Nd-linked configuration with Si tricapped trigonal prism subcluster (n = 12-19). Finally, the configuration prefers to Nd-encapsulated into Si cage framework (n = 20). For anion, the evolution at the quartet state prefers Nd-linked structure for n = 8-19 (excluded 9), and prefers Nd-encapsulated structure of n = 20. The spectral information including electron affinity, vertical detachment energy, and simulated photoelectron spectroscopy were also observed. The 4f electrons of Nd atom in NdSi with n = 8-10 hardly participate in bonding, but take part in remaining neutral clusters and all anionic NdSi clusters. The calculations of average bond energy, HOMO-LUMO gap, and chemical bonding analyses reveal that NdSi possesses perfect thermodynamic and ideal chemical stability, making it as the most appropriate constitutional units for novel multi-functional semiconductors.

摘要

研究了NdSi(n = 8 - 20)纳米团簇的结构演化、磁矩以及热化学和光谱性质。NdSi的优化结构表明,具有五重基态的构型更倾向于Nd取代最稳定的Si(n = 8 - 11)结构中的一个Si,而不是具有Si三帽三棱柱子簇的Nd连接构型(n = 12 - 19)。最后,该构型更倾向于Nd封装在Si笼框架中(n = 20)。对于阴离子,四重态的演化在n = 8 - 19(不包括9)时更倾向于Nd连接结构,而在n = 20时更倾向于Nd封装结构。还观察到了包括电子亲和能、垂直脱附能和模拟光电子能谱在内的光谱信息。n = 8 - 10的NdSi中Nd原子的4f电子几乎不参与键合,但参与剩余的中性团簇和所有阴离子NdSi团簇。平均键能、HOMO - LUMO能隙的计算以及化学键分析表明,NdSi具有完美的热力学和理想的化学稳定性,使其成为新型多功能半导体最合适的组成单元。

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