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氧化还原导电聚合物调制的超薄膜中相互关联的电荷和离子传递的光谱电化学证据。

Spectroelectrochemical Evidence of Interconnected Charge and Ion Transfer in Ultrathin Membranes Modulated by a Redox Conducting Polymer.

机构信息

Department of Chemistry, School of Engineering Sciences in Chemistry, Biotechnology and Health, KTH Royal Institute of Technology, Teknikringen 30, SE-100 44 Stockholm, Sweden.

出版信息

Anal Chem. 2020 Oct 20;92(20):14085-14093. doi: 10.1021/acs.analchem.0c03124. Epub 2020 Oct 8.

Abstract

Previous publications have demonstrated the tuning of ion-transfer (IT) processes across ion-selective membranes (ISMs) with thicknesses in the nanometer order by modulating the oxidation state of a film of a conducting polymer, such as poly(3-octylthiophene) [POT], that is in back-side contact. Attempts on the theoretical description of this charge transfer (CT)-IT system have considered the Nernst equation for the CT, while there is no empirical evidence confirming this behavior. We present herein the first experimental characterization of the CT in POT films involved in different CT-IT systems. We take advantage of the absorbance change in the POT film while being oxidized, to monitor the CT linked to nonassisted and assisted ITs at the sample-ISM interface, from one to three ionophores, therefore promoting a change in the nature and number of the ITs. The CT is visualized as an independent sigmoid in different potential ranges according to the assigned IT. Herein, we have proposed a simple calculation of the empirical CT utilizing the mathematical Sigmoidal-Boltzmann model. The identification of the physical meaning of the mathematical definition of CT opens up new possibilities for the design of sensors with superior analytical features (mainly in terms of selectivity) and the calculation of apparent binding constants in the ISM.

摘要

先前的出版物已经证明,通过调节背接触的导电聚合物(如聚(3-辛基噻吩)[POT])薄膜的氧化态,可以在纳米级厚度范围内调整离子转移(IT)过程。对于这种电荷转移(CT)-IT 系统的理论描述,人们尝试了 Nernst 方程来描述 CT,但没有经验证据证实这种行为。本文首次对参与不同 CT-IT 系统的 POT 薄膜中的 CT 进行了实验表征。我们利用 POT 薄膜在被氧化时的吸光度变化,来监测与非辅助和辅助 IT 相关的 CT,这些 IT 发生在样品-ISM 界面上,涉及一个到三个离子载体,因此促进了 IT 的性质和数量的变化。根据分配的 IT,CT 可以在不同的电位范围内可视化为独立的 S 型曲线。在此,我们提出了一种利用数学 Sigmoidal-Boltzmann 模型对经验 CT 进行简单计算的方法。CT 的数学定义的物理意义的确定为具有优异分析特性(主要在选择性方面)的传感器的设计和 ISM 中表观结合常数的计算开辟了新的可能性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c54/7584340/fea16746668e/ac0c03124_0002.jpg

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