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多层二维碘化铅钙钛矿中宽带发射的两种起源

Two Origins of Broadband Emission in Multilayered 2D Lead Iodide Perovskites.

作者信息

Paritmongkol Watcharaphol, Powers Eric R, Dahod Nabeel S, Tisdale William A

机构信息

Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

出版信息

J Phys Chem Lett. 2020 Oct 15;11(20):8565-8572. doi: 10.1021/acs.jpclett.0c02214. Epub 2020 Sep 25.

Abstract

Broadband emission in lead iodide 2D perovskites has been alternately attributed to self-trapped excitons (STEs) or permanent structural defects and/or impurities. Here, we investigate six different multilayered ( > 1) 2D lead iodide perovskites as a function of sample temperature from 5 to 300 K. We distinguish shallow defect-associated emission from a broad near-infrared (NIR) spectral feature, which we assign to an STE through subgap photoexcitation experiments. When we varied the thickness ( = 2, 3, 4), A-site cation (methylammonium vs formamidinium), and organic spacer (butylammonium vs hexylammonium vs phenylethylammonium), we found that the temperature dependence of broad NIR emission was strongly correlated with both the strength of electron-phonon coupling and the extent of structural deformation of the ground-state lattice, strongly supporting the assignment of this spectral feature to an STE. However, the extent to which formation of these STEs is intrinsic versus defect-assisted remains open to debate.

摘要

碘化铅二维钙钛矿中的宽带发射,有人认为是自陷激子(STE)所致,也有人认为是永久性结构缺陷和/或杂质所致。在此,我们研究了六种不同的多层(> 1)二维碘化铅钙钛矿,它们是样品温度在5至300 K范围内的函数。我们从一个宽泛的近红外(NIR)光谱特征中区分出与浅缺陷相关的发射,通过带隙以下光激发实验,我们将该光谱特征归因于自陷激子。当我们改变厚度(= 2、3、4)、A位阳离子(甲铵离子与甲脒离子)和有机间隔基(丁铵离子与己铵离子与苯乙铵离子)时,我们发现宽泛近红外发射的温度依赖性与电子 - 声子耦合强度以及基态晶格的结构变形程度都密切相关,这有力地支持了将该光谱特征归因于自陷激子的观点。然而,这些自陷激子的形成在多大程度上是本征的还是缺陷辅助的,仍有待进一步探讨。

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