Castillo-Quevedo César, Cabellos Jose Luis, Aceves Raul, Núñez-González Roberto, Posada-Amarillas Alvaro
Departamento de Fundamentos del Conocimiento, Centro Universitario del Norte, Universidad de Guadalajara, Carretera Federal No. 23, Km. 191, C.P. 46200 Colotlán, Jalisco, Mexico.
Departamento de Investigación en Física, Universidad de Sonora, Blvd. Luis Encinas y Rosales S/N, 83000 Hermosillo, Sonora, Mexico.
Materials (Basel). 2020 Sep 26;13(19):4300. doi: 10.3390/ma13194300.
The unfolded band structure and optical properties of Cu-doped KCl crystals were computed by first principles within the framework of density functional theory, implemented in the ABINIT software program, utilizing pseudopotential approximation and a plane-wave basis set. From a theoretical point of view, Cu substitution into pristine KCl crystals requires calculation by the supercell (SC) method. This procedure shrinks the Brillouin zone, resulting in a folded band structure that is difficult to interpret. To solve this problem and gain insight into the effect of copper ions (Cu) on electronic properties, the band structure of SC KCl:Cu was unfolded to make a direct comparison with the band structure of the primitive cell (PC) of pristine KCl. To understand the effect of Cu substitution on optical absorption, we calculated the imaginary part of the dielectric function of KCl:Cu through a sum-over-states formalism and broke it down into different band contributions by partially making an iterated cumulative sum (ICS) of selected valence and conduction bands. Consequently, we identified those interband transitions that give rise to the absorption peaks due to the Cu ion. These transitions involve valence and conduction bands formed by the Cu-3d and Cu-4s electronic states.
采用密度泛函理论框架下的第一性原理,在ABINIT软件程序中实现,利用赝势近似和平坦波基组,计算了掺铜KCl晶体的非折叠能带结构和光学性质。从理论角度来看,将铜替代到原始KCl晶体中需要采用超胞(SC)方法进行计算。这一过程会使布里渊区缩小,导致折叠能带结构难以解释。为了解决这个问题并深入了解铜离子(Cu)对电子性质的影响,对SC KCl:Cu的能带结构进行了非折叠处理,以便与原始KCl的原胞(PC)能带结构进行直接比较。为了理解铜替代对光吸收的影响,我们通过态求和形式计算了KCl:Cu介电函数的虚部,并通过对选定的价带和导带进行部分迭代累积求和(ICS),将其分解为不同的能带贡献。因此,我们确定了那些由于铜离子而产生吸收峰的带间跃迁。这些跃迁涉及由Cu-3d和Cu-4s电子态形成的价带和导带。