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具有嵌入式超表面的双引导层共振结构,用于无需完美反射镜的准临界耦合。

Dual-guiding-layer resonance structure with an embedded metasurface for quasi-critical coupling without a perfect mirror.

作者信息

Park Gyeong Cheol, Park Kwangwook

机构信息

DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, 2800, Kgs. Lyngby, Denmark.

Electronics and Telecommunications Research Institute, Daejeon, 34129, Republic of Korea.

出版信息

Sci Rep. 2020 Sep 29;10(1):16014. doi: 10.1038/s41598-020-72983-8.

Abstract

We propose an all-dielectric quasi-one-port resonance structure that achieves near perfect absorption without the use of a back mirror. The structure mainly consists of a high-refractive-index silicon metasurface and surrounding high-refractive-index guiding layers. The dual-guiding-layer (DGL) structure has high background reflectance and is designed to have a ratio of two decay rates into the upper and lower regions within a wider range. When an absorbing material is introduced into a DGL system, it can be designed to achieve a near critical-coupling condition by reducing the constraints in the two decay rates. By using single-layer graphene as an absorbing material, the DGL resonance structure shows an absorption of ~ 97% and a phase change of ∼ 0.95π near the wavelength of 1550 nm, confirming quasi-critical coupling. The optimized DGL structure is relatively insensitive to potential fabrication imperfections, and consequently, the expected average peak wavelength and absorption are obtained as 1549.29 nm and 96.74%, respectively. Angle-dependent absorption confirms that maximum absorption occurs under normal incidence. The DGL absorber is also designed to cover the whole C-band region, in order to meet the quasi-critical-coupling condition. All mode profiles are similarly quasi-symmetric along the metasurface due to the same DGL resonance mechanism.

摘要

我们提出了一种全介质准单端口共振结构,该结构无需使用后镜就能实现近乎完美的吸收。该结构主要由高折射率硅超表面和周围的高折射率引导层组成。双引导层(DGL)结构具有高背景反射率,并且设计为在更宽范围内使进入上下区域的两个衰减率之比可变。当将吸收材料引入DGL系统时,可通过减少两个衰减率的限制将其设计为实现近临界耦合条件。通过使用单层石墨烯作为吸收材料,DGL共振结构在1550 nm波长附近显示出约97%的吸收率和约0.95π的相变,证实了准临界耦合。优化后的DGL结构对潜在的制造缺陷相对不敏感,因此,预期的平均峰值波长和吸收率分别为1549.29 nm和96.74%。角度相关的吸收表明,在正入射下出现最大吸收。DGL吸收器还设计为覆盖整个C波段区域,以满足准临界耦合条件。由于相同的DGL共振机制,所有模式分布沿超表面同样近似准对称。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fb0/7524763/4da6dc8c74cd/41598_2020_72983_Fig1_HTML.jpg

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