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一种具有短消隐时间的抗刺激伪迹和M波表面肌电图探测器。

An Anti Stimulation Artifacts and M-waves Surface Electromyography Detector with a Short Blanking Time.

作者信息

Bi Zheng-Yang, Xie Chen-Xi, Zhou Yu-Xuan, Wang Hai-Peng, Lu Xiao-Ying, Wang Zhi-Gong

出版信息

Annu Int Conf IEEE Eng Med Biol Soc. 2020 Jul;2020:4126-4129. doi: 10.1109/EMBC44109.2020.9176373.

DOI:10.1109/EMBC44109.2020.9176373
PMID:33018906
Abstract

A surface electromyography (sEMG) detector, that not only removes stimulation artifacts entirely but also increases the recording time, has been developed in this paper. The sEMG detector consists of an sEMG detection circuit and a stimulation isolator. The sEMG detection circuit employs a stimulus isolate switch (SIS), a blanking (BLK) and non-linear feed-back (NFB) circuit to remove the artifacts and to increase the recording time. In the SIS, the connection between stimulator and stimulation electrodes, along with the stimulation electrodes and the ground are controlled by an opto-isolator, and the connection of instrument amplifier and the recording electrodes are controlled by CMOS-based switches. The mode switches of the BLK and the NFB circuit also employs CMOS-based switches. By an accurate timing adjustment, the voluntary EMG can be recorded during electrical stimulation. Two 6 able-bodied experiments have been performed to test the three anti-artifact sEMG detector: BLK, BLK&SIS, BLK&SIS&NFB. The results indicate that the BLK&SIS&NFB proposed in this work effectively removes stimulus artifacts and M-waves, and has a longer recording time compared with BLK and BLK&SIS circuits.

摘要

本文开发了一种表面肌电图(sEMG)探测器,它不仅能完全消除刺激伪迹,还能延长记录时间。该sEMG探测器由sEMG检测电路和刺激隔离器组成。sEMG检测电路采用刺激隔离开关(SIS)、消隐(BLK)和非线性反馈(NFB)电路来消除伪迹并延长记录时间。在SIS中,刺激器与刺激电极之间的连接以及刺激电极与地之间的连接由光隔离器控制,仪器放大器与记录电极的连接由基于CMOS的开关控制。BLK和NFB电路的模式开关也采用基于CMOS的开关。通过精确的定时调整,可以在电刺激期间记录自发肌电图。进行了两项针对健全人的实验,以测试三种抗伪迹sEMG探测器:BLK、BLK&SIS、BLK&SIS&NFB。结果表明,本文提出的BLK&SIS&NFB能有效消除刺激伪迹和M波,与BLK和BLK&SIS电路相比,记录时间更长。

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