Mao Yahui, Ma Xiaochuan, Wu Daoxiong, Lin Chen, Shan Huan, Wu Xiaojun, Zhao Jin, Zhao Aidi, Wang Bing
Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
CAS Key Laboratory of Materials for Energy Conservation, CAS Center for Excellence in Nanoscience, and Department of Material Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, China.
Nano Lett. 2020 Nov 11;20(11):8067-8073. doi: 10.1021/acs.nanolett.0c02741. Epub 2020 Oct 12.
Interfacial polarons have been demonstrated to play important roles in heterostructures containing polar substrates. However, most of polarons found so far are diffusive large polarons; the discovery and investigation of small polarons at interfaces are scarce. Herein, we report the emergence of interfacial polarons in monolayer SnSe epitaxially grown on Nb-doped SrTiO (STO) surface using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). ARPES spectra taken on this heterointerface reveal a nearly flat in-gap band correlated with a significant charge modulation in real space as observed with STM. An interfacial polaronic model is proposed to ascribe this in-gap band to the formation of self-trapped small polarons induced by charge accumulation and electron-phonon coupling at the van der Waals interface of SnSe and STO. Such a mechanism to form interfacial polaron is expected to generally exist in similar van der Waals heterojunctions consisting of layered 2D materials and polar substrates.
界面极化子已被证明在含有极性衬底的异质结构中发挥重要作用。然而,迄今为止发现的大多数极化子都是扩散型大极化子;界面处小极化子的发现和研究很少。在此,我们报告了使用角分辨光电子能谱(ARPES)和扫描隧道显微镜(STM)在Nb掺杂的SrTiO(STO)表面外延生长的单层SnSe中出现的界面极化子。在这个异质界面上采集的ARPES光谱揭示了一个近乎平坦的带隙内能带,与STM观察到的实空间中显著的电荷调制相关。提出了一个界面极化子模型,将这个带隙内能带归因于在SnSe和STO的范德华界面处由电荷积累和电子 - 声子耦合诱导形成的自陷小极化子。预计这种形成界面极化子的机制通常存在于由层状二维材料和极性衬底组成的类似范德华异质结中。