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一种可重构夹心结构的 DNA 基超材料开关。

A reconfigurable sandwich structure switchable DNA-based metamaterial.

机构信息

Hezhou University, Hezhou, 542899, China.

出版信息

Sci Rep. 2020 Oct 15;10(1):17511. doi: 10.1038/s41598-020-74214-6.

DOI:10.1038/s41598-020-74214-6
PMID:33060652
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7567067/
Abstract

In this paper, a tunable DNA-based metamaterial is designed and simulated in 170-340 THz range. This metamaterial can be transformed from an ON mode with a low resistance state of the DNA strip to its OFF mode with a high resistance state. Three Structures with containing different combinations metal layers are designed and simulated. Structure 1 with Ag/DNA/Ag and Au/DNA/Au strategies achieves field enhancement factors (FEF) 2.18 and 2.07, respectively. Structure 2 (Au/DNA/Dirac, Dirac/DNA/Au, Ag/DNA/Dirac, or Dirac/DNA/Ag) achieves the FEF values 14.11, 10.70, 13.75, or 9.62, respectively, while the FEF value of Structure 3 with Dirac/DNA/Dirac reaches 59.8. The FEF value of Structure 3 can be modulated from 59.8 to 91.96 as Fermi energy increasing from 0 to 60 meV. Moreover, the FEF value is also enhanced through increasing the magnetic field strength. The Structure 3 exhibits convertibility and sustainable modulation lines between two opposing patterns. The proposed structure reveals a switchable feature based on the resistance characteristics of DNA strips, which can be revealed as an ON/OFF switch sensor. Moreover, the switching performance of Structures 3 and 2 is significantly higher than Structure 1. Therefore, Structures 3 and 2 can be set to be an optical memristor or optical gate.

摘要

本文设计并模拟了一种在 170-340 THz 范围内可调谐的基于 DNA 的超材料。这种超材料可以从 DNA 带的低电阻状态的 ON 模式转变为高电阻状态的 OFF 模式。设计并模拟了三种包含不同组合金属层的结构。结构 1 采用 Ag/DNA/Ag 和 Au/DNA/Au 策略，分别实现了 2.18 和 2.07 的场增强因子 (FEF)。结构 2（Au/DNA/Dirac、Dirac/DNA/Au、Ag/DNA/Dirac 或 Dirac/DNA/Ag）分别实现了 14.11、10.70、13.75 或 9.62 的 FEF 值，而结构 3 采用 Dirac/DNA/Dirac 的 FEF 值达到 59.8。当费米能从 0 增加到 60 meV 时，结构 3 的 FEF 值可从 59.8 调谐到 91.96。此外，通过增加磁场强度也可以增强 FEF 值。结构 3 在两种相反模式之间表现出可转换和可持续的调制线。该结构基于 DNA 带的电阻特性表现出可切换的特性，可以作为 ON/OFF 开关传感器。此外，结构 3 和 2 的开关性能明显高于结构 1。因此，结构 3 和 2 可以用作光学忆阻器或光学门。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/a09dc3ff434e/41598_2020_74214_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/787a7e42d7d6/41598_2020_74214_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/8bbee6aa88d4/41598_2020_74214_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/37e1d38a941e/41598_2020_74214_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/d9a9df8b079a/41598_2020_74214_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/c9e9caa6e9e6/41598_2020_74214_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/751cbd9adf62/41598_2020_74214_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/2894b4ae2281/41598_2020_74214_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/a09dc3ff434e/41598_2020_74214_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/787a7e42d7d6/41598_2020_74214_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/8bbee6aa88d4/41598_2020_74214_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/37e1d38a941e/41598_2020_74214_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/d9a9df8b079a/41598_2020_74214_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/c9e9caa6e9e6/41598_2020_74214_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/751cbd9adf62/41598_2020_74214_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/2894b4ae2281/41598_2020_74214_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0548/7567067/a09dc3ff434e/41598_2020_74214_Fig8_HTML.jpg

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