ITO 薄膜的笔式绘图仪打印作为电阻式气体传感器中高 CO 灵敏度的组件。

Pen plotter printing of ITO thin film as a highly CO sensitive component of a resistive gas sensor.

机构信息

Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky pr., Moscow, 119991, Russia.

D. Mendeleev University of Chemical Technology of Russia, Miusskaya sq. 9, Moscow, 125047, Russia.

出版信息

Talanta. 2021 Jan 1;221:121455. doi: 10.1016/j.talanta.2020.121455. Epub 2020 Aug 5.

DOI:10.1016/j.talanta.2020.121455

PMID:33076078

Abstract

InO-10%SnO (ITO) thin films on various substrates have been obtained by pen plotter printing using a solution of hydrolytically active heteroligand complexes [M(CHO)(CHO)] (where М = In and Sn) as a functional ink. According to XRD and Raman spectroscopy, it has been established that the film has a bixbyite structure (space group Ia3/T), consists of particles with an average size of about 20 nm (according to SEM and AFM) and has a band gap of 3.57 eV. In order to obtain the ITO film, the temperature dependence of resistivity characterised by a minimum at 150 °C has been determined, and its gas-sensitive properties have been studied. It has been shown that the greatest resistive response is observed to carbon monoxide at 200 °C, and the film has a high sensitivity to low concentrations of CO. Two possible models describing the dependence of the sensory response on the CO concentration have been suggested. The mechanisms of defect formation in the ITO film structure and CO detection, including in a humid environment, have been considered in detail.

摘要

采用水解活性杂配位络合物[M(CHO)(CHO)]（其中 M=In 和 Sn）作为功能墨水，通过笔式绘图仪打印在各种基底上得到了 InO-10%SnO（ITO）薄膜。根据 XRD 和拉曼光谱，确定该薄膜具有纤锌矿结构（空间群 Ia3/T），由平均粒径约为 20nm 的颗粒组成（根据 SEM 和 AFM），带隙为 3.57eV。为了获得 ITO 薄膜，确定了电阻率随温度的变化关系，其在 150°C 时具有最小值，并研究了其气敏性能。结果表明，在 200°C 时对一氧化碳表现出最大的电阻响应，并且该薄膜对低浓度的 CO 具有高灵敏度。提出了两种描述敏感响应与 CO 浓度关系的可能模型。详细考虑了 ITO 薄膜结构中缺陷形成和 CO 检测的机制，包括在潮湿环境中的情况。