Cha Yoo Lim, Jo Jeong-Hye, Kim Dong-Joo, Kim Sun Hee
Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, AL 36849, USA.
Department of Materials Science and Engineering, Gachon University, Seongnam 13120, Korea.
Nanomaterials (Basel). 2022 Jun 15;12(12):2060. doi: 10.3390/nano12122060.
Silver (Ag) introduced colloidal Sn-doped In2O3 (ITO) ink for transparent conductive electrodes (TCEs) was prepared to overcome the limitation of colloidally prepared thin film; low density thin film, high resistance. ITO@Ag colloid ink was made by controlling the weight ratio of ITO and Ag nanoparticles through ball-milling and fabricated using spin coating. These films were dried at 220 °C and heat-treated at 450−750 °C in an air atmosphere to pyrolyze the organic ligand attached to the nanoparticles. All thin films showed high crystallinity. As the thermal treatment temperature increased, films showed a cracked surface, but as the weight percentage of silver increased, a flattened and smooth surface appeared, caused by the metallic silver filling the gap between the nano-particles. This worked as a bridge to allow electrical conduction, which decreases the resistivity over an order of magnitude, from 309 to 0.396, and 0.107 Ω·cm for the ITO-220 °C, ITO-750 °C, and ITO@Ag (7.5 wt.%)-750 °C, respectively. These films also exhibited >90% optical transparency. Lowered resistivity is caused due to the inclusion of silver, providing a sufficient number of charge carriers. Furthermore, the work function difference between ITO and silver builds an ohmic junction, allowing fluent electrical flow without any barrier.
为克服胶体法制备的薄膜的局限性(低密度薄膜、高电阻),制备了用于透明导电电极(TCE)的银(Ag)掺杂的胶体锡(Sn)氧化铟(In2O3)(ITO)墨水。通过球磨控制ITO和银纳米颗粒的重量比来制备ITO@Ag胶体墨水,并使用旋涂法进行制备。这些薄膜在220℃下干燥,并在空气气氛中于450−750℃进行热处理,以热解附着在纳米颗粒上的有机配体。所有薄膜均显示出高结晶度。随着热处理温度的升高,薄膜表面出现裂纹,但随着银重量百分比的增加,由于金属银填充了纳米颗粒之间的间隙,出现了平坦光滑的表面。这起到了桥梁的作用,允许导电,使电阻率降低了一个数量级以上,对于ITO - 220℃、ITO - 750℃和ITO@Ag(7.5 wt.%) - 750℃的薄膜,电阻率分别从309降至0.396和0.107Ω·cm。这些薄膜还表现出>90%的光学透明度。电阻率的降低是由于银的加入提供了足够数量的电荷载流子。此外,ITO和银之间的功函数差异形成了欧姆结,允许电流顺畅流动而没有任何障碍。