Patil G E, Kajale D D, Gaikwad V B, Jain G H
Materials Research Lab., KTHM College, Nashik 422002, India.
J Nanosci Nanotechnol. 2012 Aug;12(8):6192-201. doi: 10.1166/jnn.2012.6424.
Nanostructured SnO2 thin films were prepared by spray pyrolysis technique onto glass substrates with different thickness by varying quantity of precursor solution. The structural, optical and electrical properties of these films have been studied. The crystallographic structure of the films was studied by X-ray diffraction (XRD). It is found that the films are tetragonal with (110) orientation. The grain size increases with thickness. Atomic Force Microscopy (AFM) showed that the nanocrystalline nature of the films with porous nature. The grain size increased 14 to 29 nm with increase in film thickness. The studies on the optical properties show that the direct band gap value decreases from 3.75 to 3.50 eV. The temperature dependence of the electrical conductivity was studied. The activation energies of the films are calculated from the conductance temperature characteristics. The nanostructured SnO2 thin films were used as sensing layers for resistive gas sensors. The dependence of gas sensing properties on the thickness of SnO2 thin films was investigated. The gas response of the SnO2 thin films towards the H2S gas was determined at an operating temperature of 150 degrees C. The sensitivity towards H2S gas is strongly depending on surface morphology of the SnO2 thin films.
通过喷雾热解技术,在玻璃基板上制备了不同厚度的纳米结构SnO₂薄膜,制备时改变前驱体溶液的用量。对这些薄膜的结构、光学和电学性质进行了研究。通过X射线衍射(XRD)研究了薄膜的晶体结构。发现薄膜为具有(110)取向的四方结构。晶粒尺寸随厚度增加。原子力显微镜(AFM)显示薄膜具有纳米晶性质且具有多孔性。随着薄膜厚度增加,晶粒尺寸从14 nm增大到29 nm。光学性质研究表明,直接带隙值从3.75 eV降至3.50 eV。研究了电导率的温度依赖性。根据电导温度特性计算了薄膜的激活能。纳米结构的SnO₂薄膜用作电阻式气体传感器的传感层。研究了气体传感性能对SnO₂薄膜厚度的依赖性。在150℃的工作温度下测定了SnO₂薄膜对H₂S气体的气体响应。对H₂S气体的灵敏度强烈依赖于SnO₂薄膜的表面形态。