State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China.
ACS Appl Mater Interfaces. 2020 Nov 4;12(44):50061-50067. doi: 10.1021/acsami.0c14325. Epub 2020 Oct 26.
With reference to the organization of the human brain nervous system, a hardware-based approach that builds massively parallel neuromorphic circuits is of great significance to neuromorphic computing. The Bienenstock-Cooper-Munro (BCM) learning rule, which describes that the synaptic weight modulation exhibits frequency-dependent and tunable frequency threshold characteristics, is more compatible with the working principle of neuromorphic computing systems than spike-timing-dependent plasticity. Therefore, it is interesting to simulate the BCM learning rule on solid-state synaptic devices. Here, we have prepared λ-carrageenan (λ-car) electrolyte-gated oxide synaptic transistors, which exhibit good transistor performances, including a low subthreshold swing of 125 mV/dec, an on/off ratio larger than 10, and a mobility of 9.5 cm V s. By modulating the initial channel current and spike frequency, the simulation of the BCM rule was successfully realized. The competitive relationship between the drift of protons under an electric field and the spontaneous diffusion of protons can explain this mechanism. The proposed λ-car-gated synaptic transistor has a great significance to neuromorphic computing.
关于人类大脑神经系统的组织,基于硬件构建大规模并行神经形态电路的方法对神经形态计算具有重要意义。Bienenstock-Cooper-Munro(BCM)学习规则描述了突触权重调制表现出频率相关和可调频率阈值的特性,与神经形态计算系统的工作原理更兼容,比尖峰时间依赖性可塑性更有趣。因此,在固态突触器件上模拟 BCM 学习规则很有趣。在这里,我们制备了 λ-卡拉胶(λ-car)电解质门控氧化物突触晶体管,其表现出良好的晶体管性能,包括 125 mV/dec 的低亚阈值摆幅、大于 10 的导通/关断比和 9.5 cm V s 的迁移率。通过调制初始沟道电流和尖峰频率,成功实现了 BCM 规则的模拟。电场下质子的漂移与质子的自发扩散之间的竞争关系可以解释这种机制。所提出的 λ-car 门控突触晶体管对神经形态计算具有重要意义。