Lee Woocheol, Lee Jonghoon, Lee Hyeon-Dong, Kim Junwoo, Ahn Heebeom, Kim Youngrok, Yoo Daekyoung, Lee Jeongjae, Lee Tae-Woo, Kang Keehoon, Lee Takhee
Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea.
Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea.
Sci Rep. 2020 Nov 2;10(1):18781. doi: 10.1038/s41598-020-75764-5.
Conventional solution-processing techniques such as the spin-coating method have been used successfully to reveal excellent properties of organic-inorganic halide perovskites (OHPs) for optoelectronic devices such as solar cell and light-emitting diode, but it is essential to explore other deposition techniques compatible with large-scale production. Single-source flash evaporation technique, in which a single source of materials of interest is rapidly heated to be deposited in a few seconds, is one of the candidate techniques for large-scale thin film deposition of OHPs. In this work, we investigated the reliability and controllability of the single-source flash evaporation technique for methylammonium lead iodide (MAPbI) perovskite. In-depth statistical analysis was employed to demonstrate that the MAPbI films prepared via the flash evaporation have an ultrasmooth surface and uniform thickness throughout the 4-inch wafer scale. We also show that the thickness and grain size of the MAPbI film can be controlled by adjusting the amount of the source and number of deposition steps. Finally, the excellent large-area uniformity of the physical properties of the deposited thin films can be transferred to the uniformity in the device performance of MAPbI photodetectors prepared by flash evaporation which exhibited the responsivity of 0.2 A/W and detectivity of 3.82 × 10 Jones.
诸如旋涂法之类的传统溶液处理技术已成功用于展现有机-无机卤化物钙钛矿(OHP)在太阳能电池和发光二极管等光电器件中的优异性能,但探索与大规模生产兼容的其他沉积技术至关重要。单源闪蒸技术是将单一感兴趣的材料源快速加热并在几秒钟内沉积的技术,是大规模沉积OHP薄膜的候选技术之一。在这项工作中,我们研究了单源闪蒸技术用于甲基碘化铅(MAPbI)钙钛矿的可靠性和可控性。采用深入的统计分析来证明通过闪蒸制备的MAPbI薄膜在整个4英寸晶圆尺度上具有超光滑的表面和均匀的厚度。我们还表明,可以通过调整源的量和沉积步骤的数量来控制MAPbI薄膜的厚度和晶粒尺寸。最后,沉积薄膜物理性能的出色大面积均匀性可以转化为通过闪蒸制备的MAPbI光电探测器的器件性能均匀性,该探测器表现出0.2 A/W的响应度和3.82×10琼斯的探测率。