用甲胺对CH₃NH₃PbI₃/PbI₂复合薄膜进行后处理以实现高性能光电导器件

Post-Treatment of CH NH PbI /PbI Composite Films with Methylamine to Realize High-Performance Photoconductor Devices.

作者信息

Li Jieni, Li Henan, Liu Lai, Yao Huizhen, Tian Bingbing, Su Chenliang, Zhong Haizhe, Wang Ye, Zhang Lifu, Shi Yumeng

机构信息

International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China.

Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China.

出版信息

Chem Asian J. 2019 Aug 16;14(16):2861-2868. doi: 10.1002/asia.201900644. Epub 2019 Jul 24.

DOI:10.1002/asia.201900644

PMID:31298787

Abstract

Organometallic halide perovskites have attracted great research interest as light-active materials for use in optoelectronics. Here, we report a high-performance photoconductor based on a methylammonium lead iodide (MAPbI ) film that was prepared from a methylamine-treated MAPbI /PbI perovskite film. An ultrahigh responsivity of 3.6 A W and detectivity of 5.4×10 Jones were obtained for the film under 0.5 mW cm white-light illumination. In addition, under 420 nm light irradiation, the film exhibited its highest responsivity and detectivity of 30 A W and 2.4×10 Jones, respectively. The excellent photo-response performance results from the improved electronic quality and suppressed nonradiative recombination channels of the treated perovskite thin film.

摘要

有机金属卤化物钙钛矿作为用于光电子学的光活性材料已引起了极大的研究兴趣。在此，我们报道了一种基于甲胺处理的甲脒碘化铅（MAPbI₃）/碘化铅（PbI₂）钙钛矿薄膜制备的高性能光电导体。在0.5 mW/cm²白光照射下，该薄膜获得了3.6 A/W的超高响应度和5.4×10¹² Jones的探测率。此外，在420 nm光照射下，该薄膜分别表现出其最高响应度30 A/W和探测率2.4×10¹³ Jones。优异的光响应性能源于处理后的钙钛矿薄膜电子质量的提高和非辐射复合通道的抑制。