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一种具有直接带隙的新型二维半导体碳同素异形体:第一性原理预测。

A new two-dimensional semiconducting carbon allotrope with direct band gap: a first-principles prediction.

作者信息

Yang Xing, Wang Yuwei, Xiao Ruining, Liu Huanxiang, Bing Zhitong, Zhang Yang, Yao Xiaojun

机构信息

State Key Laboratory of Applied Organic Chemistry and Department of Chemistry, Lanzhou University, Lanzhou 730000, People's Republic of China.

College of Pharmacy, Shaanxi University of Chinese Medicine, Shiji Ave., Xi'an-Xianyang New Ecomic Zone, Shaanxi Province, People's Republic of China.

出版信息

J Phys Condens Matter. 2020 Oct 29;33(4). doi: 10.1088/1361-648X/abb743.

DOI:10.1088/1361-648X/abb743
PMID:33146152
Abstract

Two-dimensional (2D) carbon materials with an appropriate band gap play important roles in the various electronics fields. Here, based on first-principles calculations, we predict a new 2D carbon allotrope containing 32 atoms, consists of pentagonal, hexagonal, octagonal and decagonal rings. This new allotrope is named as Po-C32, which possesses P4/MMM symmetry with a tetragonal lattice and has a vertical distance of 2.22 Å between the uppermost and undermost atoms. The cohesive energy, phonon band structure,molecular dynamics simulations and elastic constants fitting confirm Po-C32 has high stabilities. The fitted in-plane Young's modulus and Poisson's ratio alonganddirections are== 244 N mand== 0.14, respectively, exhibiting the same mechanical properties alonganddirections. Interestingly, Po-C32 is a semiconductor with a direct band gap of 2.05 eV, comparable to that of phosphorene, exhibiting great potential in nanoelectronics. Moreover, two stable derivative allotropes are also predicted based on Po-C32. Po-C24-3D is an indirect narrow band gap (1.02 eV) semiconductor, while Po-C32-3D possesses a wider indirect band gap of 3.90 eV, which can be also applied in optoelectronic device.

摘要

具有合适带隙的二维(2D)碳材料在各种电子领域中发挥着重要作用。在此,基于第一性原理计算,我们预测了一种新的含32个原子的二维碳同素异形体,它由五角形、六角形、八角形和十角形环组成。这种新的同素异形体被命名为Po-C32,它具有P4/MMM对称性和四方晶格,最上层和最下层原子之间的垂直距离为2.22 Å。结合能、声子能带结构、分子动力学模拟和弹性常数拟合证实Po-C32具有高稳定性。沿和方向拟合的面内杨氏模量和泊松比分别为== 244 N m和== 0.14,沿和方向表现出相同的力学性能。有趣的是,Po-C32是一种直接带隙为2.05 eV的半导体,与黑磷相当,在纳米电子学中展现出巨大潜力。此外,还基于Po-C32预测了两种稳定的衍生同素异形体。Po-C24-3D是一种间接窄带隙(1.02 eV)半导体,而Po-C32-3D具有更宽的间接带隙3.90 eV,也可应用于光电器件。

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