Yang Jie, Quhe Ruge, Liu Shiqi, Peng Yuxuan, Sun Xiaotian, Zha Liang, Wu Baochun, Shi Bowen, Yang Chen, Shi Junjie, Tian Guang, Wang Changsheng, Lu Jing, Yang Jinbo
State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, P. R. China.
Phys Chem Chem Phys. 2020 Nov 18;22(44):25730-25739. doi: 10.1039/d0cp03761c.
Ferromagnetic order in two-dimensional (2D) van der Waals crystals has been attracting much attention recently. Remarkably, room temperature metallic ferromagnetism is realized in 2D Fe3GeTe2. Here we design a monolayer (ML) Fe3GeTe2 spin-valve device by attaching two ends to ferromagnetic electrodes and applying a magnetic field to these ferromagnetic electrodes. We investigate the spin-involved transport characteristics of such a spin valve by using ab initio quantum transport simulation. A high magnetoresistance of ∼390% is obtained and significantly increased to 450-510% after the gates are introduced. The magnetoresistance of the ML Fe3GeTe2 spin valve is insensitive to the strain modulation. Our study provides a potential option for magnetic storage applications and will motivate further studies in spintronics based on this class of materials.
二维（2D）范德华晶体中的铁磁序最近备受关注。值得注意的是，二维Fe3GeTe2实现了室温金属铁磁性。在此，我们通过将两端连接到铁磁电极并对这些铁磁电极施加磁场，设计了一种单层（ML）Fe3GeTe2自旋阀器件。我们利用从头算量子输运模拟研究了这种自旋阀的自旋相关输运特性。获得了约390%的高磁电阻，引入栅极后显著增加到450 - 510%。ML Fe3GeTe2自旋阀的磁电阻对应变调制不敏感。我们的研究为磁存储应用提供了一个潜在选择，并将推动基于此类材料的自旋电子学的进一步研究。
