Zeng Xiangyu, Ye Ge, Yang Fazhi, Ye Qikai, Zhang Liang, Ma Boyang, Liu Yulu, Xie Mengwei, Liu Yan, Wang Xiaozhi, Hao Yue, Han Genquan
Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China.
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
Nanoscale. 2023 Dec 14;15(48):19480-19485. doi: 10.1039/d3nr04069k.
van der Waals (vdW) ferromagnetic heterojunctions, characterized by an ultraclean device interface and the absence of lattice matching, have emerged as indispensable and efficient building blocks for future spintronic devices. In this study, we present a seldom observed antisymmetric magnetoresistance (MR) behavior with three distinctive resistance states in a lateral van der Waals (vdW) structure comprising FeGeTe (FGT)/graphite/FGT. In contrast to traditional spin valves governed by the magnetization configurations of ferromagnetic electrodes (FEs), this distinct feature can be attributed to the interaction between FGT and the FGT/graphite interface, which is primarily influenced by the internal spin-momentum locking effect. Furthermore, modulation of the MR behavior is accomplished by employing the coupling between antiferromagnetic and ferromagnetic materials to adjust the coercive fields of two FEs subsequent to the growth of an FGT oxide layer on FGT. This study elucidates the device physics and mechanism of property modulation in lateral spin valves and holds the potential for advancing the development of gate-tunable spintronic devices and next-generation integrated circuits.
范德华（vdW）铁磁异质结，具有超清洁的器件界面且不存在晶格匹配的特点，已成为未来自旋电子器件不可或缺且高效的构建模块。在本研究中，我们在由FeGeTe（FGT）/石墨/FGT组成的横向范德华（vdW）结构中呈现出一种很少观察到的具有三种独特电阻状态的反对称磁阻（MR）行为。与由铁磁电极（FEs）的磁化配置控制的传统自旋阀不同，这一独特特征可归因于FGT与FGT/石墨界面之间的相互作用，其主要受内部自旋动量锁定效应影响。此外，通过在FGT上生长FGT氧化层后利用反铁磁和铁磁材料之间的耦合来调节两个FEs的矫顽场，实现了对MR行为的调制。本研究阐明了横向自旋阀中的器件物理和性能调制机制，并为推进栅极可调自旋电子器件和下一代集成电路的发展具有潜力。
