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InSe范德华材料中的铁电性与相变

Ferroelectricity and phase transitions in InSe van der Waals material.

作者信息

Soleimani Maryam, Pourfath Mahdi

机构信息

School of Electrical and Computer Engineering, University College of Engineering, University of Tehran, Tehran 14395-515, Iran.

出版信息

Nanoscale. 2020 Nov 19;12(44):22688-22697. doi: 10.1039/d0nr04096g.

Abstract

van der Waals layered α-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an applied electric field. This work addresses the missing theoretical framework through a comprehensive study on the layer-dependent electronic structure, ferroelectricity and the inter-layer interaction of α-In2Se3, by using first-principles density functional theory. Furthermore, surface states and their response to the built-in internal depolarizing field were carefully analyzed. Phase transition and Curie temperatures of 1L α-In2Se3 were studied by employing Monte Carlo and ab initio molecular dynamics simulations. The estimated Curie point is above room temperature, making 1L α-In2Se3 a promising candidate for future ultra-thin ferroelectric devices.

摘要

范德华层状α-In2Se3在室温下直至双层和单层厚度都表现出平面外铁电性,可通过施加电场进行切换。这项工作通过使用第一性原理密度泛函理论,对α-In2Se3的层依赖电子结构、铁电性和层间相互作用进行全面研究,解决了缺失的理论框架问题。此外,还仔细分析了表面态及其对内置内部去极化场的响应。通过蒙特卡罗和从头算分子动力学模拟研究了1Lα-In2Se3的相变和居里温度。估计的居里点高于室温,使1Lα-In2Se3成为未来超薄铁电器件的有前途的候选材料。

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