Soleimani Maryam, Pourfath Mahdi
School of Electrical and Computer Engineering, University College of Engineering, University of Tehran, Tehran 14395-515, Iran.
Nanoscale. 2020 Nov 19;12(44):22688-22697. doi: 10.1039/d0nr04096g.
van der Waals layered α-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an applied electric field. This work addresses the missing theoretical framework through a comprehensive study on the layer-dependent electronic structure, ferroelectricity and the inter-layer interaction of α-In2Se3, by using first-principles density functional theory. Furthermore, surface states and their response to the built-in internal depolarizing field were carefully analyzed. Phase transition and Curie temperatures of 1L α-In2Se3 were studied by employing Monte Carlo and ab initio molecular dynamics simulations. The estimated Curie point is above room temperature, making 1L α-In2Se3 a promising candidate for future ultra-thin ferroelectric devices.
范德华层状α-In2Se3在室温下直至双层和单层厚度都表现出平面外铁电性,可通过施加电场进行切换。这项工作通过使用第一性原理密度泛函理论,对α-In2Se3的层依赖电子结构、铁电性和层间相互作用进行全面研究,解决了缺失的理论框架问题。此外,还仔细分析了表面态及其对内置内部去极化场的响应。通过蒙特卡罗和从头算分子动力学模拟研究了1Lα-In2Se3的相变和居里温度。估计的居里点高于室温,使1Lα-In2Se3成为未来超薄铁电器件的有前途的候选材料。