Yao Guangnan, Zhao Ding, Hong Yu, Wu Shan, Liu Dongli, Qiu Min
College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China.
Nanoscale. 2020 Nov 19;12(44):22473-22477. doi: 10.1039/d0nr05948j.
Two-dimensional transition metal dichalcogenides (TMDCs) are considered strong competitors for next generation semiconductor materials. In this paper, we propose direct electron-beam patterning of monolayer MoS2 inspired by an emerging ice lithography technique. Compared to conventional resist-based nanofabrication, ice-assisted patterning is free of contaminations from polymer resist and allows in situ processing of MoS2. The effects of electron beam dose and energy are investigated and nanoribbons with width below 30 nm are attainable. This method is expected to be applicable also to other TMDCs, providing a promising alternative for nanofabrication of 2D material devices.
二维过渡金属二硫属化物（TMDCs）被认为是下一代半导体材料的有力竞争者。在本文中，我们受新兴的冰光刻技术启发，提出了对单层MoS2进行直接电子束图案化的方法。与传统的基于抗蚀剂的纳米制造相比，冰辅助图案化没有聚合物抗蚀剂的污染，并且允许对MoS2进行原位处理。研究了电子束剂量和能量的影响，并且可以获得宽度低于30nm的纳米带。预计该方法也适用于其他TMDCs，为二维材料器件的纳米制造提供了一种有前景的替代方法。
