López-Posadas Claudia Beatriz, Wei Yaxu, Shen Wanfu, Kahr Daniel, Hohage Michael, Sun Lidong
Institute of Experimental Physics, Johannes Kepler University Linz, A-4040 Linz, Austria.
State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Weijin Road 92, Nankai District, 300072 Tianjin, China.
Beilstein J Nanotechnol. 2019 Feb 26;10:557-564. doi: 10.3762/bjnano.10.57. eCollection 2019.
Real-time monitoring is essential for understanding and precisely controlling of growth of two-dimensional transition metal dichalcogenide (2D TMDC) materials. However, it is very challenging to carry out such studies during chemical vapor deposition (CVD). Here, we report the first, real time, in situ study of the CVD growth of 2D TMDCs. More specifically, the CVD growth of a molybdenum disulfide (MoS) monolayer on sapphire substrates has been monitored in situ using differential transmittance spectroscopy (DTS). The growth of the MoS monolayer can be precisely followed by observation of the evolution of the characteristic optical features. Consequently, a strong correlation between the growth rate of the MoS monolayer and the temperature distribution in the CVD reactor has been revealed. Our results demonstrate the great potential of real time, in situ optical spectroscopy to assist the precisely controlled growth of 2D semiconductor materials.
实时监测对于理解和精确控制二维过渡金属二硫属化物（2D TMDC）材料的生长至关重要。然而，在化学气相沉积（CVD）过程中进行此类研究极具挑战性。在此，我们报告了首次对2D TMDCs的CVD生长进行的实时原位研究。更具体地说，已使用差分透射光谱（DTS）对蓝宝石衬底上二硫化钼（MoS）单层的CVD生长进行了原位监测。通过观察特征光学特征的演变，可以精确跟踪MoS单层的生长。因此，揭示了MoS单层的生长速率与CVD反应器中温度分布之间的强相关性。我们的结果证明了实时原位光谱学在辅助精确控制2D半导体材料生长方面的巨大潜力。
