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p型BiSbTe/SbTe复合材料的热电性能增强

Enhanced Thermoelectric Properties of p-Type BiSbTe/SbTe Composite.

作者信息

Shi Fanfan, Tan Chang, Wang Hongxiang, Tan Xiaojian, Yin Yinong, Yu Bo, Cai Jianfeng, Xiong Chenglong, Liu Guoqiang, Jiang Jun

机构信息

Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.

Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China.

出版信息

ACS Appl Mater Interfaces. 2020 Nov 25;12(47):52922-52928. doi: 10.1021/acsami.0c15991. Epub 2020 Nov 10.

Abstract

Constructing a nanocomposite to introduce a coherent interface is an effective way to improve the property of thermoelectric material. Here, a series composites of BiSbTe- wt % SbTe ( = 0, 0.3, 0.5, 0.8, and 1.0) were synthesized, where the hydrothermally prepared SbTe nanosheets were intimately wrapped in the solid-state-reacted BiSbTe matrix. The formation of a coherent interface was observed and confirmed by the scanning electron microscopy characterization. As the SbTe content was over 0.5 wt %, the carrier mobility could increase by 26%, while the carrier concentration decreased by 9% compared to those of the pure matrix at 300 K, enhancing the power factor to 40.1 μW/cm K. Moreover, the BiSbTe-0.5 wt % SbTe sample exhibited a reduced lattice thermal conductivity of 0.83 W/m K at room temperature, resulting from the strengthened phonon scattering by interfaces. Combined with the manipulations of both the electronic and thermal transport by constructing a coherent interface, a maximum of 1.05 was obtained in the = 0.5 composite at 300 K, and it was improved by 20% compared with the result of the BiSbTe matrix.

摘要

构建具有相干界面的纳米复合材料是改善热电材料性能的有效方法。在此,合成了一系列BiSbTe - wt% SbTe( = 0、0.3、0.5、0.8和1.0)的复合材料,其中水热法制备的SbTe纳米片紧密包裹在固态反应的BiSbTe基体中。通过扫描电子显微镜表征观察并证实了相干界面的形成。在300 K时,当SbTe含量超过0.5 wt%时,与纯基体相比,载流子迁移率可提高26%,而载流子浓度降低9%,功率因子提高到40.1 μW/cm K。此外,BiSbTe - 0.5 wt% SbTe样品在室温下表现出降低的晶格热导率,为0.83 W/m K,这是由于界面处声子散射增强所致。通过构建相干界面同时调控电子和热输运,在300 K时, = 0.5的复合材料中获得了最大1.05的热电优值,与BiSbTe基体相比提高了20%。

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