Ding Ying, Zheng Wei, Lu Xuefang, Liang Yali, Zhu Yanming, Jin Mingge, Huang Feng
State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China.
J Phys Chem Lett. 2020 Dec 3;11(23):10094-10099. doi: 10.1021/acs.jpclett.0c03024. Epub 2020 Nov 13.
Recently, tin disulfide (SnS) has become a hot research focus in various fields due to its advantages of a high transistor switching ratio, an adjustable band gap in visible light range, excellent Li storage performance, sensitive gas recognition, and efficient photocatalytic capability. However, at present, studies of its basic structure mostly stay on the regulation related to the number of layers. To maximize the value of SnS in the application design, this paper analyzes the angle-resolved polarized Raman spectra of SnS crystals grown under high-temperature sealing systems. Under the parallel scattering configuration test of both the sample basal plane and the cross plane, we observed that how the Raman scattering intensity of the two test planes varies with the polarization angle is different. Combining this experimental result with theory support allows us to reach a conclusion that the differential polarizability of the phonon vibration mode along the -axis of the cross plane of SnS is proven to be the strongest. This finding is expected to provide favorable support for the application of structural regulation of SnS and work as a reference for studying other van der Waals layered materials with greater potential.
最近，二硫化锡（SnS）因其具有高晶体管开关比、可见光范围内可调节的带隙、优异的锂存储性能、灵敏的气体识别能力和高效的光催化能力等优点，已成为各个领域的研究热点。然而，目前对其基本结构的研究大多停留在与层数相关的调控上。为了在应用设计中最大化SnS的价值，本文分析了在高温密封系统下生长的SnS晶体的角分辨偏振拉曼光谱。在样品基面和横截面的平行散射配置测试中，我们观察到两个测试平面的拉曼散射强度随偏振角的变化方式不同。将这一实验结果与理论支持相结合，我们得出结论，SnS横截面沿轴方向的声子振动模式的微分极化率被证明是最强的。这一发现有望为SnS的结构调控应用提供有力支持，并为研究其他具有更大潜力的范德华层状材料提供参考。
