Lin Der-Yuh, Hsu Hung-Pin, Tsai Chi-Feng, Wang Cheng-Wen, Shih Yu-Tai
Department of Electronic Engineering, National Changhua University of Education, Changhua City 500, Taiwan.
Department of Electronic Engineering, Ming Chi University of Technology, Taishan, New Taipei City 243, Taiwan.
Molecules. 2021 Apr 10;26(8):2184. doi: 10.3390/molecules26082184.
In this study, a series of SnSSe (0 ≤ x ≤ 2) layered semiconductors were grown by the chemical-vapor transport method. The crystal structural and material phase of SnSSe layered van der Waals crystals was characterized by X-ray diffraction measurements and Raman spectroscopy. The temperature dependence of the spectral features in the vicinity of the direct band edge excitonic transitions of the layered SnSSe compounds was measured in the temperature range of 20-300 K using the piezoreflectance (PzR) technique. The near band-edge excitonic transition energies of SnSSe were determined from a detailed line-shape fit of the PzR spectra. The PzR characterization has shown that the excitonic transitions were continuously tunable with the ratio of S and Se. The parameters that describe the temperature variation of the energies of the excitonic transitions are evaluated and discussed.
在本研究中，通过化学气相传输法生长了一系列SnSSe（0≤x≤2）层状半导体。利用X射线衍射测量和拉曼光谱对SnSSe层状范德华晶体的晶体结构和物相进行了表征。使用压致反射（PzR）技术在20 - 300 K的温度范围内测量了层状SnSSe化合物直接带边激子跃迁附近光谱特征的温度依赖性。通过对PzR光谱进行详细的线形拟合确定了SnSSe的近带边激子跃迁能量。PzR表征表明，激子跃迁可随S和Se的比例连续调谐。对描述激子跃迁能量随温度变化的参数进行了评估和讨论。
