具有完全可调化学计量比的层状三元SnSSe半导体中与温度相关的激子跃迁能量及增强的电子-声子耦合

Temperature Dependent Excitonic Transition Energy and Enhanced Electron-Phonon Coupling in Layered Ternary SnSSe Semiconductors with Fully Tunable Stoichiometry.

作者信息

Lin Der-Yuh, Hsu Hung-Pin, Tsai Chi-Feng, Wang Cheng-Wen, Shih Yu-Tai

机构信息

Department of Electronic Engineering, National Changhua University of Education, Changhua City 500, Taiwan.

Department of Electronic Engineering, Ming Chi University of Technology, Taishan, New Taipei City 243, Taiwan.

出版信息

Molecules. 2021 Apr 10;26(8):2184. doi: 10.3390/molecules26082184.

DOI:10.3390/molecules26082184

PMID:33920131

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8069899/

Abstract

In this study, a series of SnSSe (0 ≤ x ≤ 2) layered semiconductors were grown by the chemical-vapor transport method. The crystal structural and material phase of SnSSe layered van der Waals crystals was characterized by X-ray diffraction measurements and Raman spectroscopy. The temperature dependence of the spectral features in the vicinity of the direct band edge excitonic transitions of the layered SnSSe compounds was measured in the temperature range of 20-300 K using the piezoreflectance (PzR) technique. The near band-edge excitonic transition energies of SnSSe were determined from a detailed line-shape fit of the PzR spectra. The PzR characterization has shown that the excitonic transitions were continuously tunable with the ratio of S and Se. The parameters that describe the temperature variation of the energies of the excitonic transitions are evaluated and discussed.

摘要

在本研究中，通过化学气相传输法生长了一系列SnSSe（0≤x≤2）层状半导体。利用X射线衍射测量和拉曼光谱对SnSSe层状范德华晶体的晶体结构和物相进行了表征。使用压致反射（PzR）技术在20 - 300 K的温度范围内测量了层状SnSSe化合物直接带边激子跃迁附近光谱特征的温度依赖性。通过对PzR光谱进行详细的线形拟合确定了SnSSe的近带边激子跃迁能量。PzR表征表明，激子跃迁可随S和Se的比例连续调谐。对描述激子跃迁能量随温度变化的参数进行了评估和讨论。