Akzyanov R S
P N Lebedev Physical Institute of the Russian Academy of Sciences, 119991, Moscow, Russia.
J Phys Condens Matter. 2021 Mar 3;33(9):095701. doi: 10.1088/1361-648X/abcae8.
We study the spin conductivity of the bulk states of three-dimensional topological insulators within Kubo formalism. Spin Hall effect is the generation of the spin current that is perpendicular to the applied voltage. In the case of a three-dimensional topological insulator, applied voltage along x direction generates transverse spin currents along y and z directions with comparable values. We found that finite non-universal value of the spin conductivity exists in the gapped region due to the inversion of bands. Contribution to the spin conductivity from the vertex corrections enhances the spin conductivity from the filled states. These findings explain large spin conductivity that has been observed in topological insulators.
我们在久保形式理论内研究三维拓扑绝缘体体态的自旋电导率。自旋霍尔效应是产生与外加电压垂直的自旋电流。在三维拓扑绝缘体的情况下，沿x方向施加的电压会产生沿y和z方向且大小相当的横向自旋电流。我们发现，由于能带反转，在能隙区域存在有限的非普适自旋电导率值。顶点修正对自旋电导率的贡献增强了填充态的自旋电导率。这些发现解释了在拓扑绝缘体中观测到的大自旋电导率。
