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高发光性的CsPbBr@CsPbBr纳米晶体及其在电致发光发射器中的应用。

Highly Luminescent CsPbBr@CsPbBr Nanocrystals and Their Application in Electroluminescent Emitters.

作者信息

Bao Zhen, Chiu Hsin-Di, Wang Weigao, Su Qiang, Yamada Takumi, Chang Yu-Chun, Chen Shuming, Kanemitsu Yoshihiko, Chung Ren-Jei, Liu Ru-Shi

机构信息

Department of Chemistry, National Taiwan University, Taipei 106, Taiwan.

Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei 106, Taiwan.

出版信息

J Phys Chem Lett. 2020 Dec 3;11(23):10196-10202. doi: 10.1021/acs.jpclett.0c03142. Epub 2020 Nov 18.

Abstract

Zero-dimensional perovskite nanocrystals (NCs) are becoming the most attractive material due to their excellent optical performance and better stability compared with high-dimensional perovskite. However, their application in electroluminescent (EL) emitters for high-quality displays is still limited. In this work, we successfully achieved CsPbBr@CsPbBr NCs around 13.9 ± 0.2 nm by using the hot-injection method. Additional SnBr was mixed in the PbBr precursor to provide extra Br ions and reduce the excessive amount of Pb ions to promote the formation of CsPbBr@CsPbBr. Time resolution photoluminescence analysis indicated that the green emission of our CsPbBr@CsPbBr NCs originated from the embedded CsPbBr NCs, which corresponds to our previous research. The CsPbBr crystals passivated the surface of CsPbBr NCs, resulting in the absence of trions for the high photoluminescence quantum yield. The as-synthesized CsPbBr@CsPbBr NCs were used to fabricate quantum dot light-emitting diode (QLED) devices with the highest current efficiency of 4.89 cd/A. This is the best performance of the CsPbBr@CsPbBr-system QLED device, which reveals the great potential of CsPbBr@CsPbBr NCs and will inspire further study of zero-dimensional perovskite composite NCs for EL emitters.

摘要

零维钙钛矿纳米晶体(NCs)因其优异的光学性能以及与高维钙钛矿相比更好的稳定性,正成为最具吸引力的材料。然而,它们在用于高质量显示器的电致发光(EL)发射器中的应用仍然有限。在这项工作中,我们通过热注入法成功制备出了尺寸约为13.9±0.2 nm的CsPbBr@CsPbBr纳米晶体。在PbBr前驱体中混入额外的SnBr以提供额外的Br离子,并减少过量的Pb离子,从而促进CsPbBr@CsPbBr的形成。时间分辨光致发光分析表明,我们的CsPbBr@CsPbBr纳米晶体的绿色发射源自嵌入的CsPbBr纳米晶体,这与我们之前的研究一致。CsPbBr晶体钝化了CsPbBr纳米晶体的表面,使得在高光致发光量子产率下不存在三重态激子。所合成的CsPbBr@CsPbBr纳米晶体被用于制造量子点发光二极管(QLED)器件,其最高电流效率为4.89 cd/A。这是CsPbBr@CsPbBr体系QLED器件的最佳性能,揭示了CsPbBr@CsPbBr纳米晶体的巨大潜力,并将激发对用于EL发射器的零维钙钛矿复合纳米晶体的进一步研究。

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