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揭示单个CsPbBr₃/CsPbBr₃核壳钙钛矿纳米晶体的光致发光机制。

Revealing photoluminescence mechanisms of single CsPbBr/CsPbBr core/shell perovskite nanocrystals.

作者信息

Ding Huafeng, Shan Yansu, Wang Jizhou, Xu Qinfeng, Han Jing, Jiao Mengmeng, Cao Kunjian, Liu Mingliang, Mu Haifeng, Zhang Shufang, Yang Chuanlu

机构信息

Department of Physics and Optoelectronic Engineering, Ludong University Yantai 264025 People's Republic of China

Lanzhou Institute of Space Technology and Physics Lanzhou 730000 People's Republic of China.

出版信息

RSC Adv. 2021 Sep 13;11(48):30465-30471. doi: 10.1039/d1ra04981j. eCollection 2021 Sep 6.

Abstract

CsPbBr nanocrystals (NCs) encapsulated by CsPbBr has attracted extensive attention due to good stability and high photoluminescence (PL) emission efficiency. However, the origin of photoluminescence (PL) emission from CsPbBr/CsPbBr composite materials has been controversial. In this work, we prepare CsPbBr/CsPbBr core/shell nanoparticles and firstly study the mechanism of its photoluminescence (PL) at the single-particle level. Based on photoluminescence (PL) intensity trajectories and photon antibunching measurements, we have found that photoluminescence (PL) intensity trajectories of individual CsPbBr/CsPbBr core/shell NCs vary from the uniform longer periods to multiple-step intensity behaviors with increasing excitation level. Meanwhile, second-order photon correlation functions exhibit single photon emission behaviors especially at lower excitation levels. However, the PL intensity trajectories of individual CsPbBr NCs demonstrate apparent "burst-like" behaviors with very high values of (0) at any excitation power. Therefore, the distinguishable emission statistics help us to elucidate whether the photoluminescence (PL) emission of CsPbBr/CsPbBr core/shell NCs stems from band-edge exciton recombination of CsPbBr NCs or intrinsic Br vacancy states of CsPbBr NCs. These findings provide key information about the origin of emission in CsPbBr/CsPbBr core/shell nanoparticles, which improves their utilization in the further optoelectronic applications.

摘要

由CsPbBr包覆的CsPbBr纳米晶体(NCs)因其良好的稳定性和高光致发光(PL)发射效率而受到广泛关注。然而,CsPbBr/CsPbBr复合材料的光致发光(PL)发射起源一直存在争议。在这项工作中,我们制备了CsPbBr/CsPbBr核壳纳米粒子,并首次在单粒子水平上研究了其光致发光(PL)机制。基于光致发光(PL)强度轨迹和光子反聚束测量,我们发现随着激发水平的增加,单个CsPbBr/CsPbBr核壳NCs的光致发光(PL)强度轨迹从均匀的较长周期变化为多步强度行为。同时,二阶光子相关函数表现出单光子发射行为,尤其是在较低激发水平下。然而,单个CsPbBr NCs的PL强度轨迹在任何激发功率下都表现出明显的“爆发式”行为,其g(0)值非常高。因此,可区分的发射统计有助于我们阐明CsPbBr/CsPbBr核壳NCs的光致发光(PL)发射是源于CsPbBr NCs的带边激子复合还是CsPbBr NCs的本征Br空位态。这些发现提供了关于CsPbBr/CsPbBr核壳纳米粒子发射起源的关键信息,这将提高它们在进一步光电子应用中的利用率。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0b68/9041139/b35de30743bb/d1ra04981j-f1.jpg

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