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用于制备具有边缘取向延伸主链的大面积半导体聚合物薄膜的溶剂辅助摩擦转移方法

Solvent-Assisted Friction Transfer Method for Fabricating Large-Area Thin Films of Semiconducting Polymers with Edge-On Oriented Extended Backbones.

作者信息

Kumari Nikita, Pandey Manish, Syafutra Heriyanto, Nagamatsu Shuichi, Nakamura Masakazu, Pandey Shyam S

机构信息

Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 8080196, Japan.

Laboratory for Organic Electronics, Division of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan.

出版信息

ACS Appl Mater Interfaces. 2020 Dec 9;12(49):55033-55043. doi: 10.1021/acsami.0c14874. Epub 2020 Nov 24.

DOI:10.1021/acsami.0c14874
PMID:33233883
Abstract

Recent past has witnessed huge scientific efforts aiming toward enhancing in-plane charge transport by unidirectional orientation of conjugated polymer (CP) backbones adopting various techniques. However, in most of the existing methods, excess amounts of toxic halogenated solvents and preaggregation in solution are inevitable, which are the main bottlenecks toward large-scale fabrication. Solvent-assisted friction transfer (SAFT) is being reported as a novel method and improvisation over conventional friction transfer to expand its versatility. In this method, application of a small amount of the solvent (∼3 μL) during drawing not only leads to the entirely changed film morphology and molecular orientation but also addresses the existing substrate compatibility issues. Utilizing poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-]-thiophene] as a representative CP under SAFT technique, films with extended backbone and edge-on orientation was successfully fabricated, which was confirmed by various characterization tools such as X-ray diffraction, polarized absorption, and polarized Raman spectroscopies. Further, anisotropic charge transport in these films was investigated by fabricating organic field-effect transistors and the role of contact resistance was also studied. Slight solvent use, compatibility with various substrates, and film fabrication with controlled orientation, and after validation of its generality on different CPs, SAFT can be expected to open new avenues in the area of printed electronics.

摘要

最近,人们付出了巨大的科学努力,旨在通过采用各种技术使共轭聚合物(CP)主链单向取向来增强面内电荷传输。然而,在大多数现有方法中,不可避免地会使用过量的有毒卤化溶剂以及溶液中的预聚集现象,这是大规模制造的主要瓶颈。溶剂辅助摩擦转移(SAFT)作为一种新颖的方法被报道,它是对传统摩擦转移的改进,以扩展其通用性。在这种方法中,在拉伸过程中施加少量溶剂(约3 μL)不仅会导致完全改变的薄膜形态和分子取向,还能解决现有的基材兼容性问题。在SAFT技术下,以聚[2,5-双(3-十四烷基噻吩-2-基)噻吩并[3,2-b]噻吩]作为代表性CP,成功制备了具有延伸主链和边缘取向的薄膜,这通过诸如X射线衍射、偏振吸收和偏振拉曼光谱等各种表征工具得到了证实。此外,通过制造有机场效应晶体管研究了这些薄膜中的各向异性电荷传输,并研究了接触电阻的作用。SAFT使用的溶剂量少,与各种基材兼容,能够制备具有可控取向的薄膜,并且在验证了其对不同CP的通用性之后,有望在印刷电子领域开辟新的途径。

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