自支撑纳米多孔磷化铟薄膜的制备及其新型光致发光特性

Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films.

作者信息

Cao Dezhong, Wang Bo, Lu Dingze, Zhou Xiaowei, Ma Xiaohua

机构信息

School of Science, Xi'an Polytechnic University, Xi'an, 710048, People's Republic of China.

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronic, Xidian University, Xi'an, 710126, People's Republic of China.

出版信息

Sci Rep. 2020 Nov 25;10(1):20564. doi: 10.1038/s41598-020-77651-5.

DOI:10.1038/s41598-020-77651-5

PMID:33239693

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7688937/

Abstract

Self-supporting nanoporous InP membranes are prepared by electrochemical etching, and are then first transferred to highly reflective (> 96%) mesoporous GaN (MP-GaN) distributed Bragg reflector (DBR) or quartz substrate. By the modulation of bandgap, the nanoporous InP samples show a strong photoluminescence (PL) peak at 541.2 nm due to the quantum size effect of the nanoporous InP structure. Compared to the nanoporous InP membrane with quartz substrate, the nanoporous membrane transferred to DBR shows a twofold enhancement in PL intensity owing to the high light reflection effect of bottom DBR.

摘要

通过电化学蚀刻制备自支撑纳米多孔InP膜，然后首先将其转移到高反射率（>96%）的介孔GaN（MP-GaN）分布布拉格反射器（DBR）或石英衬底上。通过带隙调制，由于纳米多孔InP结构的量子尺寸效应，纳米多孔InP样品在541.2nm处显示出很强的光致发光（PL）峰。与具有石英衬底的纳米多孔InP膜相比，转移到DBR上的纳米多孔膜由于底部DBR的高光反射效应，PL强度提高了两倍。