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基于 GaN 薄膜的电化学剥离法制备的透明、柔性压电纳米发电机。

Transparent, Flexible Piezoelectric Nanogenerator Based on GaN Membrane Using Electrochemical Lift-Off.

机构信息

Department of Physics, Chonnam National University , Gwangju 61186, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2017 Mar 29;9(12):10637-10642. doi: 10.1021/acsami.6b15587. Epub 2017 Mar 16.

DOI:10.1021/acsami.6b15587
PMID:28276246
Abstract

A transparent and flexible piezoelectric nanogenerator (TF PNG) is demonstrated based on a GaN membrane fabricated by electrochemical lift-off. Under shear stress on the TF PNG by finger force (∼182 mN), the GaN membrane effectively undergoes normal stress and generates piezoelectric polarization along the c-axis, resulting in the generation of piezoelectric output from the TF PNG. Although the GaN layer is 315 times thinner than the flexible polyethylene terephthalate (PET) substrate, the low Young's modulus of PET allows the GaN membranes to absorb ∼41% of the applied strain energy, which leads to their large lattice deformation under extremely low applied stress. Maximum output voltage and current values of 4.2 V and 150 nA are obtained, and the time decay of the output voltage is discussed.

摘要

一种透明且柔韧的压电纳米发电机(TF PNG)是基于电化学剥离技术制造的 GaN 薄膜实现的。在通过手指力(约 182 mN)对 TF PNG 施加剪切应力时,GaN 薄膜能够有效地承受法向应力,并沿 c 轴产生压电极化,从而从 TF PNG 产生压电输出。尽管 GaN 层比柔韧的聚对苯二甲酸乙二醇酯(PET)基底薄 315 倍,但 PET 的低杨氏模量允许 GaN 薄膜吸收约 41%的施加应变能,这导致它们在极低的施加应力下产生大的晶格变形。获得了最大输出电压和电流值 4.2 V 和 150 nA,并讨论了输出电压的时间衰减。

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