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通过X射线衍射法评估增材制造Ti6Al4V(Eli)各种微观结构中的位错密度

Evaluation of Dislocation Densities in Various Microstructures of Additively Manufactured Ti6Al4V (Eli) by the Method of X-ray Diffraction.

作者信息

Muiruri Amos, Maringa Maina, du Preez Willie

机构信息

Department of Mechanical and Mechatronics Engineering, Central University of Technology, Free State, Bloemfontein 9301, South Africa.

Centre for Rapid Prototyping and Manufacturing, Faculty of Engineering, Built Environment and Information Technology, Central University of Technology, Free State, Bloemfontein 9300, South Africa.

出版信息

Materials (Basel). 2020 Nov 26;13(23):5355. doi: 10.3390/ma13235355.

Abstract

Dislocations play a central role in determining strength and flow properties of metals and alloys. Diffusionless phase transformation of β→α in Ti6Al4V during the Direct Metal Laser Sintering (DMLS) process produces martensitic microstructures with high dislocation densities. However, heat treatment, such as stress relieving and annealing, can be applied to reduce the volume of these dislocations. In the present study, an analysis of the X-ray diffraction (XRD) profiles of the non-heat-treated and heat-treated microstructures of DMLS Ti6Al4V(ELI) was carried out to determine the level of defects in these microstructures. The modified Williamson-Hall and modified Warren-Averbach methods of analysis were used to evaluate the dislocation densities in these microstructures. The results obtained showed a 73% reduction of dislocation density in DMLS Ti6Al4V(ELI) upon stress relieving heat treatment. The density of dislocations further declined in microstructures that were annealed at elevated temperatures, with the microstructures that were heat-treated just below the β→α recording the lowest dislocation densities.

摘要

位错在决定金属和合金的强度及流变特性方面起着核心作用。在直接金属激光烧结(DMLS)过程中,Ti6Al4V合金中β→α的无扩散相变产生了具有高位错密度的马氏体微观结构。然而,可以通过诸如消除应力和退火等热处理来减少这些位错的数量。在本研究中,对DMLS Ti6Al4V(ELI)的未热处理和热处理微观结构的X射线衍射(XRD)图谱进行了分析,以确定这些微观结构中的缺陷水平。采用改进的威廉姆森-霍尔法和改进的沃伦-阿弗巴赫分析法来评估这些微观结构中的位错密度。所得结果表明,消除应力热处理后,DMLS Ti6Al4V(ELI)的位错密度降低了73%。在高温退火的微观结构中,位错密度进一步下降,在略低于β→α转变温度下进行热处理的微观结构中位错密度最低。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/870b/7728320/e76c629e5fb0/materials-13-05355-g001.jpg

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