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超薄二维纳米结构:形态驱动增强半导体表面增强拉曼散射的表面缺陷

Ultrathin Two-Dimensional Nanostructures: Surface Defects for Morphology-Driven Enhanced Semiconductor SERS.

作者信息

Song Ge, Gong Wenbin, Cong Shan, Zhao Zhigang

机构信息

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China.

Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.

出版信息

Angew Chem Int Ed Engl. 2021 Mar 1;60(10):5505-5511. doi: 10.1002/anie.202015306. Epub 2021 Jan 19.

Abstract

Two-dimensional (2D) semiconductors have recently become attractive candidate substrates for surface-enhanced Raman spectroscopy, exhibiting good semiconductor-based SERS sensing for a wider variety of application scenarios. However, the underlying mechanism remains unclear. Herein, we propose that surface defects play a vital role in the magnification of the SERS performances of 2D semiconductors. As a prototype material, ultrathin WO nanosheets is used to demonstrate that surface defect sites and the resulting increased charge-carrier density can induce strong charge-transfer interactions at the substrate-molecule interface, thereby improving the sensitivity of the SERS substrate by 100 times with high reproducibility. Further work with other metal oxides suggests the reduced dimension of 2D materials can be advantageous in promoting SERS sensing for multiple probe molecules.

摘要

二维(2D)半导体最近成为表面增强拉曼光谱有吸引力的候选基底,在更广泛的应用场景中展现出良好的基于半导体的表面增强拉曼散射(SERS)传感性能。然而,其潜在机制仍不清楚。在此,我们提出表面缺陷在二维半导体SERS性能的放大中起关键作用。作为原型材料,超薄WO纳米片被用于证明表面缺陷位点以及由此增加的电荷载流子密度可在基底 - 分子界面诱导强烈的电荷转移相互作用,从而将SERS基底的灵敏度提高100倍且具有高重现性。对其他金属氧化物的进一步研究表明二维材料的低维特性在促进对多种探针分子的SERS传感方面可能具有优势。

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