College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China.
School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
Small. 2021 Nov;17(45):e2103442. doi: 10.1002/smll.202103442. Epub 2021 Sep 27.
Surface-enhanced Raman scattering (SERS) based on 2D semiconductors has been rapidly developed due to their chemical stability and molecule-specific SERS activity. High signal reproducibility is urgently required towards practical SERS applications. 2D gallium nitride (GaN) with highly polar Ga-N bonds enables strong dipole-dipole interactions with the probe molecules, and abundant DOS (density of states) near its Fermi level increases the intermolecular charge transfer probability, making it a suitable SERS substrate. Herein, 2D micrometer-sized GaN crystals are demonstrated to be sensitive SERS platforms with excellent signal reproducibility and stability. Strong dipole-dipole interaction between the dye molecule and 2D GaN enhances the molecular polarizability. Furthermore, 2D GaN benefits its SERS enhancement by the combination of increased DOS and more efficient charge transfer resonances when compared with its bulk counterpart.
基于二维半导体的表面增强拉曼散射（SERS）由于其化学稳定性和分子特异性 SERS 活性而得到了快速发展。对于实际的 SERS 应用，迫切需要高信号重现性。具有高极性 Ga-N 键的二维氮化镓（GaN）与探针分子具有强烈的偶极-偶极相互作用，费米能级附近丰富的态密度（DOS）增加了分子间电荷转移的概率，使其成为合适的 SERS 衬底。本文证明，二维微米级 GaN 晶体是具有优异信号重现性和稳定性的敏感 SERS 平台。染料分子与二维 GaN 之间的强偶极-偶极相互作用增强了分子的极化率。此外，与体相比，二维 GaN 通过增加 DOS 和更有效的电荷转移共振来增强 SERS 增强。
