School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China.
Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing 100081, China.
Sensors (Basel). 2020 Nov 28;20(23):6807. doi: 10.3390/s20236807.
A robust micro-electro-mechanical systems (MEMS) infrared thin film transducer of an ultra-large-scale array was proposed and fabricated on a 4-inch silicon wafer. The silicon substrate and micro cavities were introduced. This novel transducer had excellent mechanical stability, time response, and state-of-the-art pixel scale. It could bear a load of 1700 g and its load pressure was improved by more than 5.24 times and time constant decreased by 50.7% compared to the traditional soft infrared thin film transducer. The array scale of its pixels exceeded 2k × 2k. The simulation and measured results of the transient temperature and radiation intensity were well consistent. Illuminated by a 532 nm laser with a frequency of 50 Hz and 50% duty cycle, the thermal decay time of the proposed transducer was 6.0 ms. A knife-edge image was utilized for spatial resolution test and the full width at half maximum (FWHM) of the proposed transducer was 24% smaller than the traditional soft one. High-resolution infrared images were generated using the proposed robust transducer. These results proved that the robust transducer was promising in infrared image generation.
提出并制作了一种在 4 英寸硅片上的超大规模阵列的稳健微机电系统（MEMS）红外薄膜换能器。引入了硅衬底和微腔。这种新型换能器具有出色的机械稳定性、时间响应和最先进的像素尺寸。与传统的软红外薄膜换能器相比，它可以承受 1700g 的负载，并且其负载压力提高了 5.24 倍以上，时间常数降低了 50.7%。其像素的阵列规模超过了 2k×2k。瞬态温度和辐射强度的模拟和测量结果非常吻合。在 532nm 激光照射下，频率为 50Hz，占空比为 50%时，所提出的换能器的热衰减时间为 6.0ms。利用刀口图像进行空间分辨率测试，所提出的换能器的半峰全宽（FWHM）比传统的软换能器小 24%。使用所提出的稳健换能器生成了高分辨率的红外图像。这些结果证明了该稳健换能器在红外图像生成方面具有广阔的应用前景。
