Niu Jingrui, Li Wei, Liu Ping, Zhang Ke, Ma Fengcang, Chen Xiaohong, Feng Rui, Liaw Peter K
School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China.
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996, USA.
Entropy (Basel). 2019 Jan 16;21(1):75. doi: 10.3390/e21010075.
A series of (AlCrTiZrV)-Si-N films with different silicon contents were deposited on monocrystalline silicon substrates by direct-current (DC) magnetron sputtering. The films were characterized by the X-ray diffractometry (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and nano-indentation techniques. The effects of the silicon content on the microstructures and mechanical properties of the films were investigated. The experimental results show that the (AlCrTiZrV)N films grow in columnar grains and present a (200) preferential growth orientation. The addition of the silicon element leads to the disappearance of the (200) peak, and the grain refinement of the (AlCrTiZrV)-Si-N films. Meanwhile, the reticular amorphous phase is formed, thus developing the nanocomposite structure with the nanocrystalline structures encapsulated by the amorphous phase. With the increase of the silicon content, the mechanical properties first increase and then decrease. The maximal hardness and modulus of the film reach 34.3 GPa and 301.5 GPa, respectively, with the silicon content (x) of 8% (volume percent). The strengthening effect of the (AlCrTiZrV)-Si-N film can be mainly attributed to the formation of the nanocomposite structure.
通过直流磁控溅射在单晶硅衬底上沉积了一系列具有不同硅含量的(AlCrTiZrV)-Si-N薄膜。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、高分辨率透射电子显微镜(HRTEM)和纳米压痕技术对薄膜进行了表征。研究了硅含量对薄膜微观结构和力学性能的影响。实验结果表明，(AlCrTiZrV)N薄膜呈柱状晶粒生长，呈现出(200)择优生长取向。硅元素的加入导致(200)峰消失，(AlCrTiZrV)-Si-N薄膜晶粒细化。同时，形成了网状非晶相，从而形成了非晶相包裹纳米晶结构的纳米复合结构。随着硅含量的增加，力学性能先升高后降低。当硅含量(x)为8%(体积分数)时，薄膜的最大硬度和模量分别达到34.3 GPa和301.5 GPa。(AlCrTiZrV)-Si-N薄膜的强化作用主要归因于纳米复合结构的形成。
