用于DNA杂交检测的等离子体处理石墨烯场效应晶体管传感器。
Plasma treated graphene FET sensor for the DNA hybridization detection.
作者信息
Xia Yaping, Sun Yang, Li Huamin, Chen Shuo, Zhu Tiying, Wang Guangcan, Man Baoyuan, Pan Jie, Yang Cheng
机构信息
School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China.
School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China; Department of Electrical Engineering, University at Buffalo North Campus, Buffalo, NY, 14260, USA.
出版信息
Talanta. 2021 Feb 1;223(Pt 2):121766. doi: 10.1016/j.talanta.2020.121766. Epub 2020 Oct 18.
Room-temperature plasma treated graphene based FET was firstly proposed for the DNA hybridization detection. Affinity and electrical properties of the graphene based DNA-FET sensor were studied and improved benefits from the surface modification. The facile room-temperature Ar plasma easily removes residues from the graphene surface and changes the hydrophilic properties of graphene, which is important for our solution gated DNA-FET sensor. Limit of the detection of below 10 aM is obtained in our experiment. Especially, DNA concentration (C)/the amount of net drain current (ΔI) and the negative shift in the V value of the GFET sensor with the plasma treated 30 s are all improved compared with that without treatment. It shows that the easily plasma treatment of the graphene surface can be used for the solution gated FET sensor.
基于室温等离子体处理的石墨烯场效应晶体管首次被提出用于DNA杂交检测。研究了基于石墨烯的DNA场效应晶体管传感器的亲和性和电学性质，并通过表面改性获得了更好的效果。简便的室温氩等离子体能够轻松去除石墨烯表面的残留物并改变其亲水性，这对于我们的溶液栅控DNA场效应晶体管传感器很重要。在我们的实验中检测限达到了低于10 aM。特别是，与未经处理的情况相比，经30秒等离子体处理的GFET传感器的DNA浓度（C）/净漏极电流变化量（ΔI）以及V值的负向偏移都得到了改善。这表明对石墨烯表面进行简单的等离子体处理可用于溶液栅控场效应晶体管传感器。
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