School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China.
School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China; Department of Electrical Engineering, University at Buffalo North Campus, Buffalo, NY, 14260, USA.
Biosens Bioelectron. 2020 May 15;156:112128. doi: 10.1016/j.bios.2020.112128. Epub 2020 Mar 3.
Field effect transistor (FET) biosensors based on low-dimensional materials have the advantages of small in size, simple structure, fast response and high sensitivity. In this work, a field-effect transistor biosensor based on molybdenum disulfide/graphene (MoS/graphene) hybrid nanostructure was proposed and fabricated for DNA hybridization detection. The biosensor achieved an effective response to DNA concentrations in a broad range from 10 aM to 100 pM and a limit of detection (LOD) of 10 aM was obtained, which was one or more orders of magnitude lower than the reported result. The sensing mechanisms (donor and gating effects) of the FET sensor were discussed. A larger voltage shift of the charge neutral point was obtained due to a strengthened donor effect and a weakened gating effect caused by the introduction of MoS layers. Such FET sensor shows high specificity for different matching degrees of complementary DNA, indicating the potential use of such a sensor in disease diagnosis.
基于低维材料的场效应晶体管（FET）生物传感器具有尺寸小、结构简单、响应快、灵敏度高等优点。在这项工作中，提出并制备了一种基于二硫化钼/石墨烯（MoS/graphene）杂化纳米结构的场效应晶体管生物传感器，用于 DNA 杂交检测。该生物传感器对 10 aM 到 100 pM 范围内的 DNA 浓度具有有效的响应，检测限（LOD）为 10 aM，比报道的结果低 1 到 2 个数量级。讨论了 FET 传感器的传感机制（施主和栅极效应）。由于 MoS 层的引入增强了施主效应，同时减弱了栅极效应，使得电荷中性点的电压偏移更大。这种 FET 传感器对不同匹配程度的互补 DNA 具有高特异性，表明这种传感器在疾病诊断中的潜在应用。
