Kim Changjo, Baek Se-Woong, Kim Junho, Kim Byeongsu, Lee Changhwan, Park Jeong Young, Lee Jung-Yong
School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
Department of Chemical and Biological Engineering, Korea University, Seoul 02481, Republic of Korea.
ACS Appl Mater Interfaces. 2020 Dec 30;12(52):57840-57846. doi: 10.1021/acsami.0c14903. Epub 2020 Dec 15.
Colloidal quantum dots (CQDs) have large surface-to-volume ratios; thus, surface control is critical, especially when CQDs are utilized in optoelectronic devices. Layer-by-layer solid-state ligand exchange is a facile and applicable process for the formation of conductive CQD solids through various ligands; however, achieving complete ligand exchange on the CQD surface without dangling bonds is challenging. Herein, we demonstrate that CQDs can be further passivated through two-step annealing; air annealing forms sulfonate bonding at (111) Pb-rich surfaces, and subsequent N annealing removes insulating oxygen layers from the (100) surfaces of CQDs. By subsequently conducting annealing treatment in two different environments, traps on the surface of CQDs could be significantly reduced. We achieved a 40.8% enhancement of the power conversion efficiency by optimizing each two-step annealing process.
胶体量子点(CQDs)具有较大的表面体积比;因此,表面控制至关重要,特别是当CQDs用于光电器件时。逐层固态配体交换是一种通过各种配体形成导电CQD固体的简便且适用的过程;然而,在CQD表面实现无悬空键的完全配体交换具有挑战性。在此,我们证明可以通过两步退火进一步钝化CQDs;空气退火在富Pb(111)表面形成磺酸酯键,随后的N退火从CQDs的(100)表面去除绝缘氧层。通过随后在两种不同环境中进行退火处理,可以显著减少CQDs表面的陷阱。通过优化每个两步退火过程,我们实现了功率转换效率提高40.8%。