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杂化钝化胶体量子点固溶体。

Hybrid passivated colloidal quantum dot solids.

机构信息

Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.

出版信息

Nat Nanotechnol. 2012 Sep;7(9):577-82. doi: 10.1038/nnano.2012.127. Epub 2012 Jul 29.

DOI:10.1038/nnano.2012.127
PMID:22842552
Abstract

Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electron-hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device.

摘要

胶体量子点 (CQD) 薄膜可以通过量子尺寸效应进行大面积溶液处理和带隙调谐。然而,如果表面不完全钝化,CQD 薄膜的表面积与体积比很高,容易产生高密度的陷阱态,促进载流子的复合,从而对器件性能造成不利影响。最近的进展已经用较短的有机配体或卤化物阴离子取代了在合成后实现胶体稳定性的长绝缘配体,从而提高了钝化效果和堆积密度。虽然这种取代是通过固态配体交换来完成的,但溶液法更可取,因为它可以更好地控制量子点表面的电荷平衡,这对于消除中间隙陷阱态至关重要。此外,该溶液法利用了液相中金属-硫属元素化学的最新进展。在这里,我们量化了 CQD 固体中的中间隙陷阱态密度,并表明基于 CQD 的光伏器件的性能现在受到这些状态下的电子-空穴复合的限制。接下来,我们使用密度泛函理论和光电设备建模,表明为了提高性能,必须在量子点表面的每个潜在陷阱位置上结合合适的配体。然后,我们开发了一种稳健的混合钝化方案,该方案涉及在合成过程的最后阶段引入卤化物阴离子,从而可以钝化对较大有机配体不可接近的陷阱位置。然后使用有机交联策略形成薄膜。最后,我们使用混合钝化的 CQD 固体制造了一种认证效率为 7.0%的太阳能电池,这是 CQD 光伏器件的一项记录。

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