Sputtering AlN/InAlN distributed Bragg reflector across the full visible range on Si and SiO substrates.

III-nitride-based distributed Bragg reflectors (DBRs) are advantageous in being in-situ integrated in III-nitride devices, and the bandgaps and their other corresponding optical parameters are tunable. However, a growing nitride DBR with low strain and high reflectivity remains a challenge. Here we demonstrate an / DBR grown on Si and SiO substrates by reactive radio-frequency magnetron sputtering. Reflectance wavelengths covering the whole visible regions of the visible spectrum were achieved by rationally tuning the indium composition in and each layer's thickness of an / DBR. This Letter should advance the design and fabrication of nitride optical and optoelectrical devices by incorporating an / DBR, such as vertical-cavity surface-emitting laser (VCSEL) and RC LEDs.