Long Linyun, Li Tao, Hu Zelin, Song Wenqing, Zhang Lei, Wang Liancheng
Opt Lett. 2020 Dec 15;45(24):6711-6714. doi: 10.1364/OL.413264.
III-nitride-based distributed Bragg reflectors (DBRs) are advantageous in being in-situ integrated in III-nitride devices, and the bandgaps and their other corresponding optical parameters are tunable. However, a growing nitride DBR with low strain and high reflectivity remains a challenge. Here we demonstrate an / DBR grown on Si and SiO substrates by reactive radio-frequency magnetron sputtering. Reflectance wavelengths covering the whole visible regions of the visible spectrum were achieved by rationally tuning the indium composition in and each layer's thickness of an / DBR. This Letter should advance the design and fabrication of nitride optical and optoelectrical devices by incorporating an / DBR, such as vertical-cavity surface-emitting laser (VCSEL) and RC LEDs.
基于III族氮化物的分布式布拉格反射器（DBR）在原位集成于III族氮化物器件方面具有优势，并且其带隙和其他相应的光学参数是可调的。然而，生长具有低应变和高反射率的氮化物DBR仍然是一个挑战。在此，我们展示了一种通过反应性射频磁控溅射在Si和SiO衬底上生长的/ DBR。通过合理调整/ DBR中铟的成分以及各层的厚度，实现了覆盖可见光谱整个可见光区域的反射波长。这封信应通过纳入/ DBR推动氮化物光学和光电器件的设计与制造，例如垂直腔面发射激光器（VCSEL）和RC发光二极管。
