Molas Maciej R, Tyurnina Anastasia V, Zólyomi Viktor, Ott Anna K, Terry Daniel J, Hamer Matthew J, Yelgel Celal, Babiński Adam, Nasibulin Albert G, Ferrari Andrea C, Fal'ko Vladimir I, Gorbachev Roman
Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warszawa, Poland.
Faraday Discuss. 2021 Apr 1;227:163-170. doi: 10.1039/d0fd00007h. Epub 2020 Dec 16.
III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations.
III - VI 族后过渡金属硫族化合物（InSe 和 GaSe）是一类新型的层状半导体，其带隙的大小和类型会随着层数（N）的变化而发生显著改变。在此，我们利用拉曼光谱对封装在六方氮化硼中的从块状晶体到单层的 InSe 和 GaSe 剥离层进行了研究。我们展示了每个原子层内的层内振动以及层间剪切和层呼吸模式对层数 N 的依赖性。一个线性链模型可用于描述峰位随 N 的变化，这与第一性原理计算结果一致。
